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1N5552US

Description
3 A, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size122KB,4 Pages
ManufacturerSEMTECH
Websitehttp://www.semtech.com
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1N5552US Overview

3 A, SILICON, RECTIFIER DIODE

1N5552US Parametric

Parameter NameAttribute value
MakerSEMTECH
package instructionHERMETIC SEALED PACKAGE-2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
Other featuresLOW LEAKAGE CURRENT
applicationGENERAL PURPOSE
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JESD-30 codeO-LELF-R2
Maximum non-repetitive peak forward current150 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature175 °C
Maximum output current3 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage600 V
Maximum reverse recovery time2 µs
surface mountYES
Terminal formWRAP AROUND
Terminal locationEND
Base Number Matches1
1N5550US THRU 1N5554US
Surface Mount Hermetically Sealed
Standard Recovery Rectifier Diode
POWER DISCRETES
Description
Quick reference data
V
R
= 200 - 1000V
I
F =
5.0A
t
rr
= 2µS
V
F
= 1.0V
Features
Low reverse leakage current
Hermetically sealed in fused metal oxide
Good thermal shock resistance
Low forward voltage drop
Avalanche capability
These products are qualified to MIL-PRF-19500/420.
They can be supplied fully released as JAN, JANTX,
and JANTXV versions.
Absolute Maximum Ratings
Electrical specifications @ T
A
= 25°C unless otherwise specified.
Symbol
Working Reverse Voltage
Average Forward Current
@ 55 °C in free air, lead length
0.375"
Repetitive Surge Current
@ 55 °C in free air, lead length
0.375"
Non-Repetitive Surge Current
(tp = 8.3mS @ V
R
& T
JMAX
)
(tp = 8.3mS, @ V
R
& 25 °C)
Storage Temperature Range
V
RWM
I
F(AV)
1N 5550U S 1N 5551U S 1N 5552U S 1N 5553U S
1N 5554U S
Units
V
A
200
400
600
5.0
800
1000
I
FRM
25
A
I
FSM
T
STG
100
150
-65 to +175
A
°C
Revision: August 22nd, 2011
1
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