1N5624, 1N5625, 1N5626, 1N5627
Vishay Semiconductors
Standard Avalanche Sinterglass Diode
FEATURES
• Glass passivated junction
• Hermetically sealed package
• Controlled avalanche characteristics
• Low reverse current
• High surge current loading
949588
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case:
SOD-64
Terminals:
plated axial leads, solderable per
MIL-STD-750, method 2026
Polarity:
color band denotes cathode end
Mounting position:
any
Weight:
approx. 858 mg
APPLICATIONS
• Rectification diode, general purpose
PARTS TABLE
PART
1N5624
1N5625
1N5626
1N5627
TYPE DIFFERENTIATION
V
R
= 200 V; I
FAV
= 3 A
V
R
= 400 V; I
FAV
= 3 A
V
R
= 600 V; I
FAV
= 3 A
V
R
= 800 V; I
FAV
= 3 A
PACKAGE
SOD-64
SOD-64
SOD-64
SOD-64
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Reverse voltage = repetitive peak
reverse voltage
Peak forward surge current
Repetitive peak forward current
Average forward current
Pulse avalanche peak power
Pulse energy in avalanche mode, non
repetitive (inductive load switch off)
i
2
*t-rating
Junction and storage temperature
range
t
p
= 20 μs, half sine wave,
T
j
= 175 °C
I
(BR)R
= 1 A, T
j
= 175 °C
TEST CONDITION
PART
1N5624
See electrical characteristics
1N5625
1N5626
1N5627
t
p
= 10 ms, half sinewave
SYMBOL
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
I
FSM
I
FRM
I
FAV
P
R
E
R
i
2
*t
T
j
= T
stg
VALUE
200
400
600
800
100
18
3
1000
20
40
- 55 to + 175
UNIT
V
V
V
V
A
A
A
W
mJ
A
2
*s
°C
MAXIMUM THERMAL RESISTANCE
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Junction ambient
TEST CONDITION
l = 10 mm, T
L
= constant
On PC board with spacing 25 mm
SYMBOL
R
thJA
R
thJA
VALUE
25
70
UNIT
K/W
K/W
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1
Document Number: 86063
Rev. 1.5, 21-Sep-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1N5624, 1N5625, 1N5626, 1N5627
Vishay Semiconductors
Standard Avalanche Sinterglass
Diode
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Reverse current
Breakdown voltage
Diode capacitance
Reverse recovery time
Reverse recovery charge
TEST CONDITION
I
F
= 3 A
V
R
= V
RRM
V
R
= V
RRM
, T
j
= 100 °C
I
R
= 100
μA,
t
p
/T = 0.01,
t
p
= 0.3 ms
V
R
= 4 V, f = 1 MHz
I
F
= 0.5 A, I
R
= 1 A, i
R
= 0.25 A
I
F
= 1 A, dI/d
t
= 5 A/μs, V
R
= 50 V
I
F
= 1 A, dI/d
t
= 5 A/μs
PART
SYMBOL
V
F
I
R
I
R
V
(BR)
C
D
t
rr
t
rr
Q
rr
MIN.
-
-
-
-
-
-
-
-
TYP.
-
0.1
5
-
40
3.5
4.5
8
MAX
1
1
10
1600
60
5
7.5
12
UNIT
V
μA
μA
V
pF
μs
μs
μC
TYPICAL CHARACTERISTICS
(T
amb
= 25
°C,
unless otherwise specified)
40
I
FAV
- Average Forward Current (A)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
R
thJA
=70K/W
PCB: d=25mm
V
R
=V
RRM
half
sinewave
R
thJA
=25K/W
l=10mm
RthJA - Therm. Resist.
Junction/Ambient (K/W)
30
20
l
10
l
0
0
94 9563
T
L
= constant
5
10
15
20
25
30
16393
0.0
0.2
0.4 0.6
0.8 1.0
1.2 1.4
1.6
1.8
I - Lead Length (mm)
T amb- Ambient Temperature (°C)
Fig. 1 - Max. Thermal Resistance vs. Lead Length
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
100.000
10.000
1.000
0.100
0.010
0.001
16392
1000
V
R
= V
RRM
I
R
– R everse Current ( A )
– Forward Current ( A )
T
j
=175°C
100
T
j
=25°C
10
I
F
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V
F
– Forward Voltage ( V )
25
16394
50
75
100
125
150
T
j
– Junction Temperature (
°C
)
175
Fig. 2 - Forward Current vs. Forward Voltage
Fig. 4 - Reverse Current vs. Junction Temperature
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 86063
Rev. 1.5, 21-Sep-10
1N5624, 1N5625, 1N5626, 1N5627
Standard Avalanche Sinterglass
Diode
Vishay Semiconductors
300
P
R
– R everse Power Dissipation ( mW )
V
R
= V
RRM
C
D
– Diode Capacitance ( pF )
100
90
80
70
60
50
40
30
20
10
0
f=1MHz
250
200
150
100
50
0
25
P
R
–L imit
@ 100%V
R
P
R
–L imit
@ 80%V
R
16395
50
75
100
125
150
T
j
– Junction Temperature (
°C
)
175
16396
0.1
1.0
10.0
100.0
V
R
– R everse Voltage ( V )
Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature
Fig. 6 - Diode Capacitance vs. Reverse Voltage
PACKAGE DIMENSIONS
in millimeters (inches):
SOD-64
Sintered Glass Case
SOD-64
Cathode Identification
4.3 (0.168) max.
1.35 (0.053) max.
26(1.014) min.
4 (0.156) max.
26 (1.014) min.
Document-No.: 6.563-5006.4-4
Rev. 3 - Date: 09.February.2005
94 9587
Document Number: 86063
Rev. 1.5, 21-Sep-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
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Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Document Number: 91000
Revision: 11-Mar-11
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