1N5819 datasheet, PDF - EEWORLD Datasheet

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1N5819: Description1 A, 45 V, SILICON, SIGNAL DIODE; Categorysemiconductor Discrete semiconductor; File Size36KB，1 Pages; ManufacturerCHONGQING PINGWEI ENTERPRISE CO.,LTD.

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1N5819 Overview

1 A, 45 V, SILICON, SIGNAL DIODE

1N5819 Parametric

Parameter Name	Attribute value
Number of terminals	1
Number of components	1
Processing package description	DIE-2
state	DISCONTINUED
packaging shape	SQUARE
Package Size	UNCASED chip
surface mount	Yes
Terminal form	NO
terminal coating	tin lead
Terminal location	UPPER
Packaging Materials	UNSPECIFIED
Craftsmanship	SCHOTTKY
structure	single
Shell connection	isolation
Diode component materials	silicon
Diode type	Signal diode
Maximum repetitive peak reverse voltage	45 V
Maximum average forward current	1 A

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CHONGQING PINGYANG ELECTRONICS CO.,LTD.

1N5817 THRU 1N5819

SCHOTTKY BARRIER RECTIFIER

VOLTAGE：20-40V

CURRENT：1.0A

FEATURES

·Low

switching noise

·Low

forward voltage drop

·High

current capability

·High

switching capabitity

·High

reliability

·High

surge capability

DO-41

1.0(25.4)

MIN.

.205(5.2)

.166(4.2)

.034(0.9)

.028(0.7)

DIA.

MECHANICAL DATA

·Case:

Molded plastic

·Epoxy:

UL94V-0 rate flame retardant

·Lead:

MIL-STD- 202E, Method 208 guaranteed

·Polarity:Color

band denotes cathode end

·Mounting

position:

Any

·Weight:

0.33 grams

.107(2.7)

.080(2.0)

1.0(25.4)

MIN.

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS

Ratings at 25℃ ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz,resistive or inductive load.

For capacitive load, derate current by 20%.

SYMBOL

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward rectified Current

.375”(9.5mm) lead length at T

=75°C

Peak Forward Surge Current 8.3ms single half

sine-wave superimposed on rate load (JEDEC

method)

Maximum Instantaneous Forward Voltage

at 1.0A DC

Maximum Forward Voltage at 3.1A DC

Maximum DC Reverse Current

at Rated DC Blocking Voltage

=25°C

=100°C

RRM

RMS

FSM

0.45

0.75

1N5817

1N5818

1.0

0.55

0.875

1.0

10.0

110

°C/W

0.60

0.90

1N5819

units

Typical Junction Capacitance (Note 1)

Typical Thermal Resistance (Note 2)

Notes:

1. Measured at 1MHz and applied reverse voltage of 4.0 volts

2. Thermal Resistance from junction to ambient at .375”(9.5mm) lead length

１

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1N5819 Related Products

	1N5819	1N5817	1N5818
Description	1 A, 45 V, SILICON, SIGNAL DIODE	RECTIFIER DIODE,SCHOTTKY,20V V(RRM),DO-41	1 A, 30 V, SILICON, SIGNAL DIODE, DO-204AL
state	DISCONTINUED	CONSULT MFR	TRANSFERRED
Diode type	Signal diode	rectifier diode	Signal diode
Number of terminals	1	-	2
Number of components	1	-	1
Processing package description	DIE-2	-	Plastic, DO-41, 2 PIN
packaging shape	SQUARE	-	round
Package Size	UNCASED chip	-	LONG FORM
Terminal form	NO	-	Wire
Terminal location	UPPER	-	AXIAL
Packaging Materials	UNSPECIFIED	-	Plastic/Epoxy
Craftsmanship	SCHOTTKY	-	SCHOTTKY
structure	single	-	single
Shell connection	isolation	-	isolation
Diode component materials	silicon	-	silicon
Maximum repetitive peak reverse voltage	45 V	-	30 V
Maximum average forward current	1 A	-	1 A

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