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1N5821

Description
RECTIFIER DIODE, DO-201AD
CategoryDiscrete semiconductor    diode   
File Size124KB,1 Pages
ManufacturerNew Jersey Semiconductor
Websitehttp://www.njsemi.com
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1N5821 Overview

RECTIFIER DIODE, DO-201AD

1N5821 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNew Jersey Semiconductor
Reach Compliance Codeunknow
applicationGENERAL PURPOSE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.9 V
JESD-609 codee0
Maximum non-repetitive peak forward current80 A
Number of components1
Phase1
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current3 A
Maximum repetitive peak reverse voltage30 V
Maximum reverse current2000 µA
technologySCHOTTKY
Terminal surfaceTin/Lead (Sn/Pb)

1N5821 Related Products

1N5821 1N5820 1N5822
Description RECTIFIER DIODE, DO-201AD RECTIFIER DIODE 3 A, 40 V, SILICON, RECTIFIER DIODE, DO-201
Is it Rohs certified? incompatible incompatible incompatible
Maker New Jersey Semiconductor New Jersey Semiconductor New Jersey Semiconductor
Reach Compliance Code unknow unknow unknow
application GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE
Configuration SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 0.9 V 0.85 V 0.95 V
JESD-609 code e0 e0 e0
Maximum non-repetitive peak forward current 80 A 80 A 80 A
Number of components 1 1 1
Phase 1 1 1
Maximum operating temperature 150 °C 150 °C 150 °C
Minimum operating temperature -65 °C -65 °C -65 °C
Maximum output current 3 A 3 A 3 A
Maximum repetitive peak reverse voltage 30 V 20 V 40 V
Maximum reverse current 2000 µA 2000 µA 2000 µA
technology SCHOTTKY SCHOTTKY SCHOTTKY
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
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