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1N5821-TP

Description
3 A, 30 V, SILICON, RECTIFIER DIODE, DO-201AD
Categorysemiconductor    Discrete semiconductor   
File Size475KB,4 Pages
ManufacturerMCC
Websitehttp://www.mccsemi.com
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1N5821-TP Overview

3 A, 30 V, SILICON, RECTIFIER DIODE, DO-201AD

1N5821-TP Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionROHS COMPLIANT, PLASTIC PACKAGE-2
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shaperound
Package SizeLONG FORM
Terminal formWire
terminal coatingMATTE Tin
Terminal locationAXIAL
Packaging MaterialsPlastic/Epoxy
CraftsmanshipSCHOTTKY
structuresingle
Shell connectionisolation
Diode component materialssilicon
Diode typerectifier diode
applicationGENERAL PURPOSE
Phase1
Maximum repetitive peak reverse voltage30 V
Maximum average forward current3 A
Maximum non-repetitive peak forward current80 A
MCC
TM
Micro Commercial Components
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
Features
1N5820
THRU
1N5822
3 Amp Schottky
Barrier Rectifier
20 - 40 Volts
DO-201AD
Halogen
free available upon request by adding suffix "-HF"
Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates
RoHS Compliant. See ordering information)
Low Forward Voltage Drop and High Current Capability
High Surge Current Capability
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
Maximum Ratings
Operating Temperature: -55°C to +125°C
Storage Temperature: -55°C to +125°C
Maximum Thermal Resistance; 28
°C/W
Junction To Ambient
MCC
Catalog
Number
Device
Marking
Maximum
Recurrent
Peak
Reverse
Voltage
20V
30V
40V
Maximum
RMS
Voltage
Maximum
DC
Blocking
Voltage
20V
30V
40V
D
1N5820
1N5821
1N5822
1N5820
1N5821
1N5822
14V
21V
28V
A
Cathode
Mark
B
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current
Peak Forward Surge
Current
Maximum
Instantaneous
Forward Voltage
1N5820
1N5821
1N5822
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
Typical Junction
Capacitance
I
F(AV)
I
FSM
3.0A
80A
T
A
= 85°C
8.3ms, half sine
D
C
V
F
.475V
.500V
.525V
0.5mA
20mA
200pF
I
FM
= 3.0A;
T
J
= 25°C
(Note 2)
DIM
A
B
C
D
INCHES
MIN
.287
.189
.048
1.000
DIMENSIONS
MM
MIN
7.30
4.80
1.20
25.40
I
R
T
J
= 25°C
T
J
= 100°C
Measured at
1.0MHz, V
R
=4.0V
MAX
.374
.208
.052
---
MAX
9.50
5.30
1.30
---
NOTE
C
J
Notes:1.High Temperature Solder Exemption Applied, see EU Directive Annex 7.
2.Pulse test: Pulse width 300
µsec,
Duty cycle 1%
Revision: B
www.mccsemi.com
1 of 4
2013/01/01

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1N5821-TP 1N5820-AP 1N5820-BP 1N5821-AP 1N5821-BP 1N5822-AP 1N5822-BP
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