TIGER ELECTRONIC CO.,LTD
Product specification
600V N-Channel MOSFET
DESCRIPTION
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild
’
s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply.
1N60
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C)
Parameter
Drain-Source Voltage
Drain Current - Continuous
Drain Current - Pulsed
Gate-Source Voltage
Power Dissipation
Max. Operating Junction Temperature
O
Symbol
V
DSS
I
D
I
DM
V
GSS
P
D
T
j
T
stg
Value
600
1.0
4.0
±
30
30
150
-55~150
Unit
V
A
A
V
W
o
o
C
TO-251
C
Storage Temperature
ELECTRICAL CHARACTERISTICS ( Ta = 25
O
C)
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Gate Threshold Voltage
Static Drain-Source On-Resistance
Drain-Source Diode Forward Voltage
Symbol
Test Conditions
Min.
600
—
—
—
3.0
—
—
Typ.
—
—
—
—
—
9.3
—
Max.
—
10
100
-100
5.0
11.5
1.4
Unit
V
uA
nA
nA
V
W
V
BV
DSS
V
GS
= 0V, I
D
=250
μ
A
I
DSS
I
GSSF
I
GSSR
V
GS(th)
V
SD
V
DS
=600V, V
GS
=0V
V
GS
=30V, V
DS
=0V
V
GS
= -30V, V
DS
=0V
V
DS
= V
GS
, I
D
=250
μ
A
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 A
V
GS
= 0 V, I
S
= 1.0 A
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