UNISONIC TECHNOLOGIES CO., LTD
1N60A
0.5A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
1N60A
is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged avalanche
characteristics. This power MOSFET is usually used at high speed
switching applications in power supplies, PWM motor controls, high
efficient DC to DC converters and bridge circuits.
Power MOSFET
FEATURES
* V
DS
= 600V
* I
D
= 0.5A
* R
DS(ON)
=15Ω@V
GS
= 10V.
* Ultra Low gate charge (typical 8.0nC)
* Low reverse transfer capacitance (C
RSS
= 3.0 pF(max))
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
1N60AL-T92-B
1N60AG-T92-B
1N60AL-T92-K
1N60AG-T92-K
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-92
TO-92
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tape Box
Bulk
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1 of 8
QW-R502-091,F
1N60A
ABSOLUTE MAXIMUM RATINGS
(
T
C
= 25°C, unless otherwise specified.)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
600
V
Gate-Source Voltage
V
GSS
±30
V
Continuous Drain Current
I
D
0.5
A
Pulsed Drain Current (Note 2)
I
DM
2
A
Single Pulse(Note 3)
E
AS
50
mJ
Avalanche Energy
3.6
4.0
mJ
Repetitive(Note 2)
E
AR
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
Power Dissipation (T
C
=25°C)
3
W
P
D
Derate above 25°C
25
mW/°C
Junction Temperature
T
J
+150
°C
Operating Temperature
T
OPR
-55 ~ +150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L=92mH, I
AS
=0.8A, V
DD
=50V, R
G
=0Ω, Starting T
J
=25°C
4. I
SD
≤1.0A,
di/dt≤100A/μs, V
DD
≤BV
DSS
, Starting T
J
=25°C
THERMAL DATA
PARAMETER
Junction to Ambient
SYMBOL
θ
JA
RATINGS
120
UNIT
°C/W
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QW-R502-091,F
1N60A
ELECTRICAL CHARACTERISTICS
(T
J
=25°C, unless otherwise specified.)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
SYMBOL
BV
DSS
I
DSS
TEST CONDITIONS
Power MOSFET
MIN
600
TYP MAX UNIT
V
μA
nA
nA
V/°C
4.2
15
100
20
3
12
11
40
18
8
1.8
4.0
34
32
90
46
10
V
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
A
A
ns
μC
V
GS
= 0V, I
D
= 250μA
V
DS
= 600V, V
GS
= 0V
Forward
V
GS
= 20V, V
DS
= 0V
Gate-Source Leakage Current
I
GSS
Reverse
V
GS
= -20V, V
DS
= 0V
Breakdown Voltage Temperature
I
D
= 250μA
△BV
DSS
/
△
T
J
Coefficient
referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
= 10V, I
D
= 0.5A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
V
DS
=25V, V
GS
=0V, f=1MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D (ON)
V
DD
=300V, I
D
=0.5A, R
G
=5Ω
Turn-On Rise Time
t
R
(Note 1,2)
Turn-Off Delay Time
t
D (OFF)
Turn-Off Fall Time
t
F
Total Gate Charge
Q
G
V
DS
=480V, V
GS
=10V, I
D
=0.8A
Gate-Source Charge
Q
GS
(Note 1,2)
Gate-Drain Charge
Q
GD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
V
GS
=0V, I
SD
= 1.2A
Maximum Continuous Drain-Source Diode
I
S
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
Reverse Recovery Time
t
RR
V
GS
=0V, I
SD
= 1.2A
di/dt = 100A/μs
Reverse Recovery Charge
Q
RR
Notes: 1. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
2. Essentially independent of operating temperature.
10
100
-100
0.4
2.0
11
1.6
1.2
4.8
136
0.3
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QW-R502-091,F
1N60A
TEST CIRCUITS AND WAVEFORMS
+
V
DS
-
+
-
L
Power MOSFET
D.U.T.
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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4 of 8
QW-R502-091,F
1N60A
TEST CIRCUITS AND WAVEFORMS (Cont.)
R
L
V
DD
V
DS
V
GS
R
G
10%
t
D(ON)
t
R
Power MOSFET
V
DS
90%
10V
Pulse Width≤ 1μs
Duty Factor≤0.1%
D.U.T.
V
GS
t
D(OFF)
t
F
Switching Test Circuit
Switching Waveforms
12V
50kΩ
0.2μF
V
GS
0.3μF
Same Type
as D.U.T.
V
DS
10V
Q
GS
Q
G
Q
GD
DUT
1mA
V
GS
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BV
DSS
I
AS
I
D(t)
V
DD
V
DS(t)
t
p
Time
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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QW-R502-091,F
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