UNISONIC TECHNOLOGIES CO., LTD
1N60
1.2A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC
1N60
is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged
avalanche characteristics. This power MOSFET is usually used at
high speed switching applications in power supplies, PWM motor
controls, high efficient DC to DC converters and bridge circuits.
FEATURES
* R
DS(ON)
<11.5Ω@ V
GS
=10V, I
D
=0.6A
* Ultra Low gate charge (typical 5.0nC)
* Low reverse transfer capacitance (C
RSS
= typical 3.0 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
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QW-R502-052.N
1N60
ORDERING INFORMATION
Package
SOT-223
TO-220
TO-220F2
TO-220F
TO-251
TO-251S
TO-251S2
TO-251S4
TO-252
TO-252D
TO-126
TO-92
TO-92
Ordering Number
Lead Free
Halogen Free
-
1N60G-AA3-R
1N60L-TA3-T
1N60G-TA3-T
1N60L-TF2-T
1N60G-TF2-T
1N60L-TF3-T
1N60G-TF3-T
1N60L-TM3-T
1N60G-TM3-T
1N60L-TMS-T
1N60G-TMS-T
1N60L-TMS2-T
1N60G-TMS2-T
1N60L-TMS4-T
1N60G-TMS4-T
1N60L-TN3-R
1N60G-TN3-R
1N60L-TND-R
1N60G-TND-R
1N60L-T60-K
1N60G-T60-K
1N60L-T92-B
1N60G-T92-B
1N60L-T92-K
1N60G-T92-K
Note: Pin Assignment: G: Gate
D: Drain S: Source
Power MOSFET
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tape Reel
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Bulk
Tape Box
Bulk
MARKING
PACKAGE
MARKING
SOT-223
TO-220
TO-220F
TO-220F2
TO-251
TO-251S
TO-251S2
TO-251S4
TO-252
TO-252D
TO-126
TO-92
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QW-R502-052.N
1N60
■
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°С, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
600
V
Gate-Source Voltage
V
GSS
±30
V
Avalanche Current (Note 2)
I
AR
1.2
A
Continuous Drain Current
I
D
1.2
A
Pulsed Drain Current (Note 2)
I
DM
4.8
A
Single Pulsed (Note 3)
E
AS
50
mJ
Avalanche Energy
Repetitive (Note 2)
E
AR
4.0
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
SOT-223
8
TO-251/TO-252
TO-252D/TO-251S
28
TO-251S2/ TO-251S4
TO-220
40
Power Dissipation
P
D
W
TO-220F
21
TO-220F2
23
TO-92(T
A
=25°С)
1
TO-126
12.5
Junction Temperature
T
J
+150
°С
Operating Temperature
T
OPR
-55 ~ +150
°С
Storage Temperature
T
STG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 60mH, I
AS
= 1A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25°C
4. I
SD
≤
1.2A, di/dt
≤
200A/μs, V
DD
≤
BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
SYMBOL
RATINGS
150
110
θ
JA
62.5
62.5
140
132
14
4.53
θ
Jc
3.13
5.95
5.43
80
10
°С/W
°С/W
UNIT
PARAMETER
SOT-223
TO-251/TO-252
TO-252D/TO-251S
TO-251S2/ TO-251S4
Junction to Ambient
TO-220/TO-220F
TO-220F2
TO-92
TO-126
SOT-223
TO-251/TO-252
TO-252D/TO-251S
TO-251S2/ TO-251S4
TO-220
Junction to Case
TO-220F
TO-220F2
TO-92
TO-126
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QW-R502-052.N
1N60
ELECTRICAL CHARACTERISTICS
(T
C
=25℃, unless otherwise specified.)
SYMBOL
BV
DSS
I
DSS
TEST CONDITIONS
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Power MOSFET
MIN TYP MAX UNIT
600
V
10
μA
100 nA
-100 nA
0.4
V/℃
4.0
9.3 11.5
120 150
20
25
3.0 4.0
5
25
7
25
5.0
1.0
2.6
20
60
25
60
6.0
V
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
A
A
ns
μC
V
GS
=0V, I
D
=250μA
V
DS
=600V, V
GS
=0V
Forward
V
GS
=30V, V
DS
=0V
Gate-Source Leakage Current
I
GSS
Reverse
V
GS
=-30V, V
DS
=0V
Breakdown Voltage Temperature Coefficient
△
BV
DSS
/
△
T
J
I
D
=250μA
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250μA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=0.6A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
V
DS
=25V, V
GS
=0V, f=1MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
Turn-On Rise Time
t
R
V
DD
=300V, I
D
=1.2A, R
G
=50Ω
(Note 2,3)
Turn-Off Delay Time
t
D(OFF)
Turn-Off Fall Time
t
F
Total Gate Charge
Q
G
V
DS
=480V, V
GS
=10V, I
D
=1.2A
Gate-Source Charge
Q
GS
(Note 2,3)
Gate-Drain Charge
Q
GD
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
V
GS
=0V, I
S
=1.2A
Maximum Continuous Drain-Source Diode
I
S
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
Reverse Recovery Time
t
rr
V
GS
=0V, I
S
=1.2A
dI
F
/dt=100A/μs (Note 1)
Reverse Recovery Charge
Q
RR
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. Pulse Test: Pulse Width
≤300μs,
Duty Cycle≤2%
3. Essentially Independent of Operating Temperature
2.0
1.4
1.2
4.8
160
0.3
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QW-R502-052.N
1N60
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
D.U.T.
+
V
DS
-
+
-
L
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
V
GS
(Driver)
P.W.
Period
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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QW-R502-052.N
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