UNISONIC TECHNOLOGIES CO., LTD
1N60Z
1.2A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
1N60Z
is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and high rugged avalanche
characteristics. This power MOSFET is usually used at high
speed switching applications in power supplies, PWM motor
controls, high efficient DC to DC converters and bridge circuits.
Power MOSFET
FEATURES
* R
DS(ON)
=11.5Ω@V
GS
= 10V.
* Ultra Low gate charge (typical 5.0nC)
* Low reverse transfer capacitance (C
RSS
= typical 3.0 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
1N60ZL-T92-B
1N60ZG-T92-B
1N60ZL-T92-K
1N60ZG-T92-K
1N60ZL-T92-R
1N60ZG-T92-R
1N60ZL-TN3-R
1N60ZG-TN3-R
1N60ZL-TN3-T
1N60ZG-TN3-T
Note: Pin Assignment: G: Gate
D: Drain S: Source
1N60ZL-T92-B
(1)Packing Type
(2)Package Type
(3)Lead Free
Package
TO-92
TO-92
TO-92
TO-252
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tape Box
Bulk
Tape Reel
Tape Reel
Tube
(1) B: Tape Box, K: Bulk, R: Tape Reel, T: Tube
(2) T92: TO-92, TN3: TO-252
(3) G: Halogen Free, L: Lead Free
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Copyright © 2012 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-724.C
1N60Z
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25℃, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
600
V
Gate-Source Voltage
V
GSS
±20
V
Avalanche Current (Note 2)
I
AR
1.2
A
Continuous Drain Current
I
D
1.2
A
Pulsed Drain Current (Note 2)
I
DM
4.8
A
Single Pulsed (Note 3)
E
AS
50
mJ
Avalanche Energy
Repetitive (Note 2)
E
AR
4.0
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
1
TO-92
Power Dissipation (T
A
=25℃)
W
P
D
TO-252
1.5
Junction Temperature
T
J
+150
℃
℃
Operating Temperature
T
OPR
-55 ~ +150
Storage Temperature
T
STG
-55 ~ +150
℃
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 60mH, I
AS
= 1A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25°C
4. I
SD
≤
1.2A, di/dt
≤
200A/μs, V
DD
≤
BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
TO-92
TO-252
SYMBOL
θ
JA
RATINGS
140
100
UNIT
℃/W
ELECTRICAL CHARACTERISTICS
(T
C
=25℃, unless otherwise specified.)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
SYMBOL
BV
DSS
I
DSS
TEST CONDITIONS
MIN
600
10
+5
-5
0.4
2.0
9.3
120
20
3.0
5
25
7
25
5.0
1.0
2.6
4.0
11.5
150
25
4.0
20
60
25
60
6.0
TYP MAX UNIT
V
μA
μA
μA
V/℃
V
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
GS
=0V, I
D
=250μA
V
DS
=600V, V
GS
=0V
Forward
V
GS
=20V, V
DS
=0V
Gate-Source Leakage Current
I
GSS
Reverse
V
GS
=-20V, V
DS
=0V
Breakdown Voltage Temperature Coefficient
△BV
DSS
/
△
T
J
I
D
=250μA
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250μA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=0.6A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
Output Capacitance
C
OSS
V
DS
=25V, V
GS
=0V, f=1MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
Turn-On Rise Time
t
R
V
DD
=300V, I
D
=1.2A, R
G
=50Ω
(Note 2,3)
Turn-Off Delay Time
t
D(OFF)
Turn-Off Fall Time
t
F
Total Gate Charge
Q
G
V
DS
=480V, V
GS
=10V,
Gate-Source Charge
Q
GS
I
D
=1.2A (Note 2,3)
Gate-Drain Charge
Q
GD
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2 of 6
QW-R502-724.C
1N60Z
ELECTRICAL CHARACTERISTICS
(T
C
=25℃, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
V
GS
=0V, I
S
=1.2A
Maximum Continuous Drain-Source Diode
I
S
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
Reverse Recovery Time
t
rr
V
GS
=0V, I
S
=1.2A
dI
F
/dt=100A/μs (Note 1)
Reverse Recovery Charge
Q
RR
Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. Pulse Test: Pulse Width
≤300μs,
Duty Cycle≤2%
3. Essentially Independent of Operating Temperature
Power MOSFET
MIN
TYP MAX UNIT
1.4
1.2
4.8
160
0.3
V
A
A
ns
μC
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3 of 6
QW-R502-724.C
1N60Z
TEST CIRCUITS AND WAVEFORMS
+
V
DS
-
+
-
L
Power MOSFET
D.U.T.
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
V
GS
(Driver)
P.W.
Period
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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4 of 6
QW-R502-724.C
1N60Z
TEST CIRCUITS AND WAVEFORMS (Cont.)
Power MOSFET
Switching Test Circuit
Switching Waveforms
12V
50kΩ
0.2μF
0.3μF
Same Type
as D.U.T.
10V
V
DS
Q
GS
Q
G
Q
GD
V
GS
DUT
3mA
V
GS
Charge
Gate Charge Test Circuit
Gate Charge Waveform
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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www.unisonic.com.tw
5 of 6
QW-R502-724.C
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