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1N6272

Description
UNIDIRECTIONAL, SILICON, TVS DIODE
Categorysemiconductor    Discrete semiconductor   
File Size59KB,3 Pages
ManufacturerCHONGQING PINGWEI ENTERPRISE CO.,LTD.
Download Datasheet View All

1N6272 Overview

UNIDIRECTIONAL, SILICON, TVS DIODE

CHONGQING PINGYANG ELECTRONICS CO.,LTD.
1.5KE6.8 THRU 1.5KE440A
TRANSIENT VOLTAGE SUPPRESSOR
BREAKDOWN VOLTAGE:6.8- 440V
PEAK PULSE POWER:1500W
FEATURES
·1500
Watts Peak Power capability on
10/1000 us waveform
·Excellent
clamping capability
·Low
zener impedance
·Fast
response time
DO-27
1.0(25.4)
MIN.
.375(9.5)
.335(8.5)
1.0(25.4)
MIN.
.052(1.3)
.048(1.2)
DIA.
MECHANICAL DATA
·Case:
Molded plastic
·Epoxy:
UL94V-0 rate flame retardant
·Lead:
MIL-STD- 202E, Method 208 guaranteed
·Polarity:Color
band denotes cathode end (cathode)
except bidirectional types
·Mounting
position:
Any
·Weight:
1.2
grams
.220(5.6)
.187(5.0)
DIA.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz,resistive or inductive load.
For capacitive load, derate current by 20%.
DEVICES FOR BIPOLAR APPLICATIONS
For Bidirectional use C or CA suffix (e.g. 1.5KE6.8C, 1.5KE440CA)
Electrical characteristcs apply in both directions
SYMBOL
VALUE
Minmum 1500
5.0
200
3.5/5.0
units
W
W
A
V
Peak Pulse Power Dissipation on 10/1000 us
waverform (Note. 1)
Steady Stste Power Dissipation at T
L
=75°C lead
lengths .375”(9.5mm) (Note 2)
Peak Forward Surge Current, 8.3ms single half
sine-wave superimposed on rate load (JEDEC
method) (Note 3)
Maximum Instantaneous Forward Voltage at 50A for
Unidirectional Only
(Note
4)
P
PPM
P
M(AV)
I
FSM
V
F
Notes: 1. Non-repetitive current pulse, derated above TA=25°C
2. Mounted on Copper leaf area of 1.6×1.6”(40×40mm)
3. 8.3ms single half sine-wave equivalent square wave, duty cycle = 4 pulses per minute maximum
4. V
F
=3.5V max.for devices of V
(BR)
≦200V
and V
F
=6.5V max. for decices of V
(BR)
>200V
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