· Underwriters Laboratory recognition under UL standard
for safety 497B : Isolated loop circuit protection
· Glass passivated junction
· 1500W peak pulse power capability on 10/1000μS
waveform, repetition rate(duty cycle) : 0.05%
· Excellent clamping capability
· Low incremental surge resistance
· Very fast response time
· Includes 1N6267 thru 1N6303A
POWER 1500Watts
VOLTAGE 6.8 to 440 Volts
DO-201AD
0.210(5.3)
0.188(4.8)
DIA.
1.0(25.4)
MIN.
Mechanical Data
· Case : JEDEC DO-201AD molded plastic body
over passivated junction
· Terminals : Solder plated axial leads, solderable per
MIL-STD-750, method 2026
· High temperature soldering guaranteed : 265
℃
/10 seconds,
0.375"(9.5mm) lead length, 5lbs. (2.3Kg) tension
· Polarity : For uni-directional types the color band denotes
cathode, which is positive with respect to the
anode under normal TVS operation
· Mounting Position : Any
· Weight : 0.042 ounce, 0.18 gram
· Flammability : Epoxy is rated UL 94V-0
0.375(9.5)
0.285(7.2)
0.042(1.1)
0.037(0.9)
DIA.
1.0(25.4)
MIN.
Dimensions in inches and (millimeters)
Devices For Bidirectional Applications
· For bi-directional use C or CA suffix for types 1.5KE6.8 thru types K1.5E440(e.g. 1.5KE6.8C, 1.5KE440CA),
electrical characteristics apply in both directions.
Maximum Ratings And Electrical Characteristics
(Ratings at 25℃ ambient temperature unless otherwise specified)
Symbols
Peak power dissipation with a 10/1000μS waveform (Note 1. Fig. 1)
Peak pulse current with a 10/1000μS waveform (Note 1)
Steady state power dissipation at T
L
=75℃ lead length 0.375"(9.5mm) (Note2)
Peak forward surge current, 8.3mm single half sine-wave unidirectional only (Note 3)
Maximum instantaneous forward voltage at 100A for unidirectional only (Note4)
Typical thermal resistance junction to lead
Typical thermal resistance junction to ambient
Operating junction and storage temperature range
P
PPM
I
PPM
P
M(AV)
I
FSM
V
F
Values
1500
See next table
6.5
200
3.5/5.0
20
75
-55 to +175
Units
Watts
Amps
Watts
Amps
Volts
℃/W
℃/W
℃
Rθ
JL
Rθ
JA
T
J
,T
STG
Notes:
(1) Non repetitive current pulse, per Fig.3 and derated above T
A
=25℃ per Fig.2
(2) Mounted on copper pads area of 1.6×1.6"(40×40mm) per Fig.5
(3) Measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle=4 pulse per minute maximum
(4) V
F
=3.5 Volts for 1.5KE220(A) & below; V
F
=5.0 Volts for 1.5KE250(A) & above
ELECTRICAL CHARACTERISTIC at (TA=25℃ unless other specified)
JEDEC
Type
Number
1N6267
(C )
1N6267
(C )
A
1N6268
(C )
1N6268
(C )
A
1N6269
(C )
1N6269
(C )
A
1N6270
(C )
1N6270
(C )
A
1N6271
(C )
1N6271
(C )
A
1N6272
(C )
1N6272
(C )
A
1N6273
(C )
1N6273
(C )
A
1N6274
(C )
1N6274
(C )
A
1N6275
(C )
1N6275
(C )
A
1N6276
(C )
1N6276
(C )
A
1N6277
(C )
1N6277
(C )
A
1N6278
(C )
1N6278
(C )
A
1N6279
(C )
1N6279
(C )
A
1N6280
(C )
1N6280
(C )
A
1N6281
(C )
1N6281
(C )
A
1N6282
(C )
1N6282
(C )
A
1N6283
(C )
1N6283
(C )
A
1N6284
(C )
1N6284
(C )
A
1N6285
(C )
1N6285
(C )
A
1N6286
(C )
1N6286
(C )
A
1N6287
(C )
1N6287
(C )
A
1N6288
(C )
1N6288
(C )
A
1N6289
(C )
1N6289
(C )
A
1N6290
(C )
1N6290
(C )
A
1N6291
(C )
1N6291
(C )
A
1N6292
(C )
General
Semiconductor
Part
Number
1.5K E 6.8
(C )
1.5K E 6.8
(C )
A
1.5K E 7.5
(C )
1.5K E 7.5
(C )
A
1.5K E 8.2
(C )
1.5K E 8.2
(C )
A
1.5K E 9.1
(C )
1.5K E 9.1
(C )
A
1.5K E 10
(C )
1.5K E 10
(C )
A
1.5K E 11
(C )
1.5K E 11
(C )
A
1.5K E 12
(C )
1.5K E 12
(C )
A
1.5K E 13
(C )
1.5K E 13
(C )
A
1.5K E 15
(C )
1.5K E 15
(C )
A
1.5K E 16
(C )
1.5K E 16
(C )
A
1.5K E 18
(C )
1.5K E 18
(C )
A
1.5K E 20
(C )
1.5K E 20
(C )
A
1.5K E 22
(C )
1.5K E 22
(C )
A
1.5K E 24
(C )
1.5K E 24
(C )
A
1.5K E 27
(C )
1.5K E 27
(C )
A
1.5K E 30
(C )
1.5K E 30
(C )
A
1.5K E 33
(C )
1.5K E 33
(C )
A
1.5K E 36
(C )
1.5K E 36
(C )
A
1.5K E 39
(C )
1.5K E 39
(C )
A
1.5K E 43
(C )
1.5K E 43
(C )
A
1.5K E 47
(C )
1.5K E 47
(C )
A
1.5K E 51
(C )
1.5K E 51
(C )
A
1.5K E 56
(C )
1.5K E 56
(C )
A
1.5K E 62
(C )
1.5K E 62
(C )
A
1.5K E 68
(C )
1.5K E 68
(C )
A
1.5K E 75
(C )
Breakdown Voltage
V
(BR)
at I
T
(1)
(V)
Min
6.12
6.45
6.75
7.13
7.38
7.79
8.19
8.65
9.00
9.50
9.90
10.5
10.8
11.4
11.7
12.4
13.5
14.3
14.4
15.2
16.2
17.1
18.0
19.0
19.8
20.9
21.6
22.8
24.3
25.7
27.0
28.5
29.7
31.4
32.4
34.2
35.1
37.1
38.7
40.9
42.3
44.7
45.9
48.5
50.4
53.2
55.8
58.9
61.2
64.6
67.5
Max
7.48
7.14
8.25
7.88
9.02
8.61
10.0
9.55
11.0
10.5
12.1
11.6
13.2
12.6
14.3
13.7
16.5
15.8
17.6
16.8
19.8
18.9
22.0
21.0
24.2
23.1
26.4
25.2
29.7
28.4
33.0
31.5
36.3
34.7
39.6
37.8
42.9
41.0
47.3
45.2
51.7
49.4
56.1
53.6
61.8
58.8
68.2
65.1
74.8
71.4
82.5
Test
Current
I
T
(mA)
10
10
10
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Stand-off
Voltage
V
WM
(V)
5.50
5.80
6.05
6.40
6.63
7.02
7.37
7.78
8.10
8.55
8.92
9.40
9.72
10.2
10.5
11.1
12.1
12.8
12.9
13.6
14.5
15.3
16.2
17.1
17.8
18.8
19.4
20.5
21.8
23.1
24.3
25.6
26.8
28.2
29.1
30.8
31.6
33.3
34.8
36.8
38.1
40.2
41.3
43.6
45.4
47.8
50.2
53.0
55.1
58.1
60.7
Maximum
Reverse
Leakage
at V
WM
I
D
(4)
(µA)
1000
1000
500
500
200
200
50
50
10
10
5.0
5.0
5.0
5.0
5.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Maximum
Peak Pulse
Current
I
PPM
(2)
(A)
139
143
128
133
120
124
109
112
100
103
92.6
96.2
86.7
89.8
78.9
82.4
68.2
70.8
63.8
66.7
56.6
59.5
51.5
54.2
47.0
49.0
43.2
45.2
38.4
40.0
34.5
36.2
31.4
32.8
28.8
30.1
26.6
27.8
24.2
25.3
22.1
23.1
20.4
21.4
18.6
19.5
16.9
17.6
15.3
16.3
13.9
Maximum
Clamping
Voltage
at I
PPM
V
C
(V)
10.8
10.5
11.7
11.3
12.5
12.1
13.8
13.4
15.0
14.5
16.2
15.6
17.3
16.7
19.0
18.2
22.0
21.2
23.5
22.5
26.5
25.2
29.1
27.7
31.9
30.6
34.7
33.2
39.1
37.5
43.5
41.4
47.7
45.7
52.0
49.9
56.4
53.9
61.9
59.3
67.8
64.8
73.5
70.1
80.5
77.0
89.0
85.0
98.0
92.0
109
Maximum
Temp.
Coefficient
of V
(BR)
(% /¡ C)
0.057
0.057
0.061
0.061
0.065
0.065
0.068
0.068
0.073
0.073
0.075
0.075
0.076
0.078
0.081
0.081
0.084
0.084
0.086
0.086
0.088
0.089
0.090
0.090
0.092
0.092
0.094
0.094
0.096
0.096
0.097
0.097
0.098
0.098
0.099
0.099
0.100
0.100
0.101
0.101
0.101
0.101
0.102
0.102
0.103
0.103
0.104
0.104
0.104
0.104
0.105
ELECTRICAL CHARACTERISTIC at (TA=25℃ unless other specified)
JEDEC
Type
Number
1N6292
(C )
A
1N6293
(C )
1N6293
(C )
A
1N6294
(C )
1N6294
(C )
A
1N6295
(C )
1N6295
(C )
A
1N6296
(C )
1N6296
(C )
A
1N6297
(C )
1N6297
(C )
A
1N6298
(C )
1N6298
(C )
A
1N6299
(C )
1N6299
(C )
A
1N6300
(C )
1N6300
(C )
A
1N6301
(C )
1N6301
(C )
A
1N6302
(C )
1N6302
(C )
A
1N6303
(C )
1N6303
(C )
A
General
Semiconductor
Part
Number
1.5K E 75
(C )
A
1.5K E 82
(C )
1.5K E 82
(C )
A
1.5K E 91
(C )
1.5K E 91
(C )
A
1.5K E 100
(C )
1.5K E 100
(C )
A
1.5K E 110
(C )
1.5K E 110
(C )
A
1.5K E 120
(C )
1.5K E 120
(C )
A
1.5K E 130
(C )
1.5K E 130
(C )
A
1.5K E 150
(C )
1.5K E 150
(C )
A
1.5K E 160
(C )
1.5K E 160
(C )
A
1.5K E 170
(C )
1.5K E 170
(C )
A
1.5K E 180
(C )
1.5K E 180
(C )
A
1.5K E 200
(C )
1.5K E 200
(C )
A
1.5K E 220
(C )
1.5K E 220
(C )
A
1.5K E 250
(C )
1.5K E 250
(C )
A
1.5K E 300
(C )
1.5K E 300
(C )
A
1.5K E 350
(C )
1.5K E 350
(C )
A
1.5K E 400
(C )
1.5K E 400
(C )
A
1.5K E 440
(C )
1.5K E 440
(C )
A
Breakdown Voltage
V
(BR)
at I
T
(1)
(V)
Min
71.3
73.8
77.9
81.9
86.5
90.0
95.0
99.0
105
108
114
117
124
136
143
144
152
153
162
162
171
180
190
198
209
225
237
270
285
315
333
360
380
396
418
Max
78.8
90.2
86.1
100.0
95.5
110
105
121
116
132
126
143
137
165
158
176
168
187
179
198
189
220
210
242
231
275
263
330
315
385
368
440
420
484
462
Test
Current
I
T
(mA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Stand-off
Voltage
V
WM
(V)
64.1
66.4
70.1
73.7
77.8
81.0
85.5
89.2
94.0
97.2
102
105
111
121
128
130
136
138
145
146
154
162
171
175
185
202
214
243
256
284
300
324
342
356
376
Maximum
Reverse
Leakage
at V
WM
I
D
(4)
(µA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Maximum
Peak Pulse
Current
I
PPM
(2)
(A)
14.6
12.7
13.3
11.5
12.0
10.4
10.9
9.5
9.9
8.7
9.1
8.0
8.4
7.0
7.2
6.5
6.8
6.1
6.4
5.8
6.1
5.2
5.5
4.4
4.6
4.2
4.4
3.5
3.6
3.0
3.1
2.6
2.7
2.4
2.5
Maximum
Clamping
Voltage
at I
PPM
V
C
(V)
104
118
113
131
125
144
137
158
152
173
165
187
179
215
207
230
219
244
234
258
246
287
274
344
328
360
344
430
414
504
482
574
548
631
602
Maximum
Temp.
Coefficient
of V
(BR)
(% /¡ C)
0.105
0.105
0.105
0.106
0.106
0.106
0.106
0.107
0.107
0.107
0.107
0.107
0.107
0.108
0.106
0.106
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
Notes : (1)
(2)
(3)
(4)
P uls e tes t: t
p =
50ms
S urge current waveform per F ig. 3 and derate per F ig. 2
All terms and s ymbols are cons is tent with ANS I/IE E E C A62.35
For bidirectional types with V
R
10 volts and les s the I
D
limit is doubled
A pplic ation
¥ T his s eries of S ilicon Trans ient S uppres s ors is us ed in applications where large voltage trans ients can permanently damage voltage-s ens itive components.
¥ T he T V S diode can be us ed in applications where induced lightning on rural or remote trans mis s ion lines pres ents a hazard to electronic circuitry
(ref: R .E .A. s pecification P.E . 60).
¥ T his Trans ient Voltage S uppres s or diode has a puls e power rating of 1500 watts for one millis econd. T he res pons e time of T V S diode clamping action is
effectively ins tantaneous (1 x 10
-9
s econds bidirectional); therefore, they can protect integrated circuits, MOS devices, hybrids, and other voltage s ens itive s emi-
conductors and components. T V S diodes can als o be us ed in s eries or parallel to increas e the peak power ratings.
RATINGS AND CHARACTERISTIC CURVES 1.5KE SERIES AND 1N6267 THRU 1N6303(C)A
Fig. 1Ð P eak P uls e Po wer R ating C ur ve
100
Fig. 2Ð P uls e Derating C ur ve
P eak P uls e P ower (P
P P
) or C urrent (I
P P
)
Derating in P ercentage, %
100
P eak P uls e P ower (kW)
75
10
50
1
P
PPM ,
25
0.1
0.1
μS
1.0
μS
1 0
μS
100
μS
1.0ms
10ms
0
0
25
50
75
100
125
150
o
175
200
t
d ,
P uls e Width (s ec.)
T
A
,
Ambient Temperature ( C )
Fig. 3Ð P uls e Waveform
150
F ig. 4 - Typic al J unc tion C apac itanc e
10,000
P eak P uls e C urrent, % I
R S M
tr = 10
μS
P eak Value
I
P P M
100
C
J
, C apacitance, pF
T
J
= 25 C
P uls e Width (td)
is defined as the point
where the peak current
decays to 50% of I
P P M
o
Unidirectional
B idirectional
V
R
= 0
1,000
Half Value
I
P P M
50
IP P
2
10/1000
μS
W aveform
as defined by R .E .A.
td
100
V
R
= R ated
S tand-off Voltage
f = 1 MHz
V s ig = 50mV p-p
o
T
J
= 25 C
5
10
100
500
I
P P M ,
0
0
1.0
2.0
3.0
4.0
10
t,
Time (ms )
V
(B R )
, B reakdown Voltage (V )
P
M(AV )
, S teady S tate P ower Dissipation (W)
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
0
F ig. 5Ð S teady S tate Power
Derating C ur ve
60 H
Z
R es is tive or
Inductive Load
F ig. 6 - Maximum Non-repetitive Peak F orwar d
S urge C urrent Unidirectional Only
200
P eak F orward S urge C urrent (A)
8.3ms S ingle Half S ine-Wave
(J E DE C Method) T
J
= T
J
max.
100
L = 0.375" (9.5mm)
Lead Lengths
1.6 x 1.6 x .040"
(40 x 40 x 1mm)
C opper Heat S inks
25
50
75
100
125
150
o
10
175
200
1
10
100
T
L
,
Lead Temperature ( C )
Number of C ycles at 60 H
Z
RATINGS AND CHARACTERISTIC CURVES 1.5KE SERIES AND 1N6267 THRU 1N6303(C)A
I'm using LPC824 to do a project recently. Most functions can be adjusted, but I found that the microlib library in Keil conflicts with the NXP project program, so I can't use Kei functions such as sp...
It is the end of June again, and it is graduation time again. I passed by several schools on my way to work. I saw my classmates were busy taking photos. I thought they would go their separate ways, r...
I drew a board based on TI's evaluation board. The network part is the same as their drawing, as shown in the attachment, but the network cannot be adjusted and the connection light is not on. Moreove...
How do I put an application in a certain directory when generating nk? ? For example, put it in \Program Files. I only know to put the file in /Windows in .bib and then create a link in .dat...
Setting up the stack at initialization; Set up system mode stackMSR CPSR_c, #0xdfLDR SP, =StackUsrWhen an IRQ interrupt occurs,MSR CPSR_c, #(NoInt | SYS32Mode); Switch to system modeCMP R1, #1LDREQ SP...
TCH05B---Five-key capacitive touch sensing key chip Overview: Touch sensing detection keys can penetrate the insulating material shell to detect the charge movement brought by human fingers, so that e...
introduction
my country has a vast territory and a large population. The scale of housing construction is huge, and the amount of residential construction is large and wide. It is still on t...[Details]
In
circuit design,
current
measurement
is widely used, and the main fields are divided into three categories: in measurement,
the electric meter
is used to measure the curre...[Details]
China's new energy vehicles are in a transition period from research and development to real industrial development. In 2012, with the intensive launch of new energy vehicle policy planning, the de...[Details]
1. Introduction
This design was made for participating in an electronic design competition. It effectively solved the problem of the operation and control of an electric car on a seesaw. The s...[Details]
With the advent of increasingly powerful processors, image sensors, memory, and other semiconductor devices, as well as the algorithms that enable them, computer vision can be implemented in a wide...[Details]
The Portable Digital Data Acquisition System (PDDAS) uses LabVIEW Real-Time and PXI to control the wind tunnel test and record air pressure data from 128 different channels.
"The LabVIEW Real-...[Details]
Introduction
Power subsystems are becoming more and more integrated into the overall system. Power systems have moved from being separate "essential dangerous devices" to being monitorable...[Details]
My colleague and I spent the day chatting in the hotel bar. We had met with several customers. We were both wondering how come these engineers we were meeting knew almost nothing about analog techn...[Details]
AD8205 is
a single-supply high-performance differential
amplifier
launched by
Analog
Devices of the United States
. The typical single-supply voltage is 5V, and its common-mode volta...[Details]
Aromatic gases are widely present in food, medicine, cosmetics and various daily chemical products, such as snacks, liquor, spices, Chinese herbal medicines, plasters, perfumes, soaps, shampoos, et...[Details]
Product series: PB-B-RS232/485 interface (hereinafter sometimes referred to as "interface") is a product in the PROFIBUS bus bridge series.
The main purpose of the bridge series ...[Details]
1 Introduction
PROFIBUS is an international, open, and manufacturer-independent fieldbus standard. It is widely used in manufacturing automation, process industry automation, and automatio...[Details]
In the analysis of electronic circuits, static analysis (also known as DC analysis) is the basis of circuit analysis. However, it is well known that electronic components are nonlinear, so the anal...[Details]
RS-422 and RS-485 are both serial data interface standards, which were developed and published by the Electronic Industries Association (EIA). RS-422 defines a balanced communication interface with a ...[Details]
VP2188 is a color STN LCD module produced by Jingdian Pengyuan. This module is a dot matrix transmissive color STN display screen with a color scale of 65 k colors and white LED backlight. Its core...[Details]
NXP MCU
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