1N6280 datasheet, PDF - EEWORLD Datasheet

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1N6280: Description1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-201; Categorysemiconductor Discrete semiconductor; File Size59KB，3 Pages; ManufacturerCHONGQING PINGWEI ENTERPRISE CO.,LTD.

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1N6280 Overview

1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-201

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CHONGQING PINGYANG ELECTRONICS CO.,LTD.

1.5KE6.8 THRU 1.5KE440A

TRANSIENT VOLTAGE SUPPRESSOR

BREAKDOWN VOLTAGE：6.8- 440V

PEAK PULSE POWER：1500W

FEATURES

·1500

Watts Peak Power capability on

10/1000 us waveform

·Excellent

clamping capability

·Low

zener impedance

·Fast

response time

DO-27

1.0(25.4)

MIN.

.375(9.5)

.335(8.5)

1.0(25.4)

MIN.

.052(1.3)

.048(1.2)

DIA.

MECHANICAL DATA

·Case:

Molded plastic

·Epoxy:

UL94V-0 rate flame retardant

·Lead:

MIL-STD- 202E, Method 208 guaranteed

·Polarity:Color

band denotes cathode end (cathode)

except bidirectional types

·Mounting

position:

Any

·Weight:

1.2

grams

.220(5.6)

.187(5.0)

DIA.

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS

Ratings at 25℃ ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz,resistive or inductive load.

For capacitive load, derate current by 20%.

DEVICES FOR BIPOLAR APPLICATIONS

For Bidirectional use C or CA suffix (e.g. 1.5KE6.8C, 1.5KE440CA)

Electrical characteristcs apply in both directions

SYMBOL

VALUE

Minmum 1500

5.0

200

3.5/5.0

units

W

A

V

Peak Pulse Power Dissipation on 10/1000 us

waverform (Note. 1)

Steady Stste Power Dissipation at T

L

=75°C lead

lengths .375”(9.5mm) (Note 2)

Peak Forward Surge Current, 8.3ms single half

sine-wave superimposed on rate load (JEDEC

method) (Note 3)

Maximum Instantaneous Forward Voltage at 50A for

Unidirectional Only

（Note

4）

P

PPM

P

M(AV)

I

FSM

V

F

Notes: 1. Non-repetitive current pulse, derated above TA=25°C

2. Mounted on Copper leaf area of 1.6×1.6”(40×40mm)

3. 8.3ms single half sine-wave equivalent square wave, duty cycle = 4 pulses per minute maximum

4. V

F

=3.5V max.for devices of V

(BR)

≦200V

and V

F

=6.5V max. for decices of V

(BR)

＞200V

１

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