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1N6283

Description
1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
Categorysemiconductor    Discrete semiconductor   
File Size59KB,3 Pages
ManufacturerCHONGQING PINGWEI ENTERPRISE CO.,LTD.
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1N6283 Overview

1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE

CHONGQING PINGYANG ELECTRONICS CO.,LTD.
1.5KE6.8 THRU 1.5KE440A
TRANSIENT VOLTAGE SUPPRESSOR
BREAKDOWN VOLTAGE:6.8- 440V
PEAK PULSE POWER:1500W
FEATURES
·1500
Watts Peak Power capability on
10/1000 us waveform
·Excellent
clamping capability
·Low
zener impedance
·Fast
response time
DO-27
1.0(25.4)
MIN.
.375(9.5)
.335(8.5)
1.0(25.4)
MIN.
.052(1.3)
.048(1.2)
DIA.
MECHANICAL DATA
·Case:
Molded plastic
·Epoxy:
UL94V-0 rate flame retardant
·Lead:
MIL-STD- 202E, Method 208 guaranteed
·Polarity:Color
band denotes cathode end (cathode)
except bidirectional types
·Mounting
position:
Any
·Weight:
1.2
grams
.220(5.6)
.187(5.0)
DIA.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz,resistive or inductive load.
For capacitive load, derate current by 20%.
DEVICES FOR BIPOLAR APPLICATIONS
For Bidirectional use C or CA suffix (e.g. 1.5KE6.8C, 1.5KE440CA)
Electrical characteristcs apply in both directions
SYMBOL
VALUE
Minmum 1500
5.0
200
3.5/5.0
units
W
W
A
V
Peak Pulse Power Dissipation on 10/1000 us
waverform (Note. 1)
Steady Stste Power Dissipation at T
L
=75°C lead
lengths .375”(9.5mm) (Note 2)
Peak Forward Surge Current, 8.3ms single half
sine-wave superimposed on rate load (JEDEC
method) (Note 3)
Maximum Instantaneous Forward Voltage at 50A for
Unidirectional Only
(Note
4)
P
PPM
P
M(AV)
I
FSM
V
F
Notes: 1. Non-repetitive current pulse, derated above TA=25°C
2. Mounted on Copper leaf area of 1.6×1.6”(40×40mm)
3. 8.3ms single half sine-wave equivalent square wave, duty cycle = 4 pulses per minute maximum
4. V
F
=3.5V max.for devices of V
(BR)
≦200V
and V
F
=6.5V max. for decices of V
(BR)
>200V
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