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1N70G-T92-R

Description
1.2A, 700V N-CHANNEL POWER MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size307KB,8 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Download Datasheet Parametric Compare View All

1N70G-T92-R Overview

1.2A, 700V N-CHANNEL POWER MOSFET

1N70G-T92-R Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerUNISONIC TECHNOLOGIES CO.,LTD
Parts packaging codeTO-92
package instructionHALOGEN FREE PACKAGE-3
Contacts3
Reach Compliance Codecompli
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage700 V
Maximum drain current (Abs) (ID)1.2 A
Maximum drain current (ID)1.2 A
Maximum drain-source on-resistance13.5 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)4 pF
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)3 W
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
UNISONIC TECHNOLOGIES CO., LTD
1N70
1.2A, 700V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
1N70
is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged avalanche
characteristics. This power MOSFET is usually used at high speed
switching applications in power supplies, PWM motor controls, high
efficient DC to DC converters and bridge circuits.
Power MOSFET
FEATURES
* R
DS(ON)
=13.5Ω@V
GS
= 10V.
* Ultra Low gate charge (typical 5.0nC)
* Low reverse transfer capacitance (C
RSS
= typical 3.0 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
1N70L-T92-B
1N70G-T92-B
1N70L-T92-K
1N70G-T92-K
1N70L-T92-R
1N70G-T92-R
Package
TO-92
TO-92
TO-92
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
Packing
Tape Box
Bulk
Tape Reel
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
1 of 8
QW-R502-171,C

1N70G-T92-R Related Products

1N70G-T92-R 1N70G-T92-B 1N70G-T92-K 1N70L-T92-R 1N70_11
Description 1.2A, 700V N-CHANNEL POWER MOSFET 1.2A, 700V N-CHANNEL POWER MOSFET 1.2A, 700V N-CHANNEL POWER MOSFET 1.2A, 700V N-CHANNEL POWER MOSFET 1.2A, 700V N-CHANNEL POWER MOSFET
Is it Rohs certified? incompatible incompatible incompatible conform to -
Maker UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD -
Parts packaging code TO-92 TO-92 TO-92 TO-92 -
package instruction HALOGEN FREE PACKAGE-3 HALOGEN FREE PACKAGE-3 HALOGEN FREE PACKAGE-3 LEAD FREE PACKAGE-3 -
Contacts 3 3 3 3 -
Reach Compliance Code compli compli compli compli -
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE -
Minimum drain-source breakdown voltage 700 V 700 V 700 V 700 V -
Maximum drain current (Abs) (ID) 1.2 A 1.2 A 1.2 A 1.2 A -
Maximum drain current (ID) 1.2 A 1.2 A 1.2 A 1.2 A -
Maximum drain-source on-resistance 13.5 Ω 13.5 Ω 13.5 Ω 13.5 Ω -
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR -
Maximum feedback capacitance (Crss) 4 pF 4 pF 4 pF 4 pF -
JEDEC-95 code TO-92 TO-92 TO-92 TO-92 -
JESD-30 code O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 -
Number of components 1 1 1 1 -
Number of terminals 3 3 3 3 -
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE -
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape ROUND ROUND ROUND ROUND -
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL -
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL -
Maximum power dissipation(Abs) 3 W 3 W 3 W 3 W -
surface mount NO NO NO NO -
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE -
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM -
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING -
Transistor component materials SILICON SILICON SILICON SILICON -
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