INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
2N3583
DESCRIPTION
·Contunuous
Collector Current-I
C
= 1A
·Power
Dissipation-P
D
=35W @T
C
= 25℃
·Collector-Emitter
Saturation Voltage-
: V
CE(
sat
)= 5.0 V(Max)@ I
C
= 1A
APPLICATIONS
·Designed
for high-speed switching and linear amplifier appli-
cation for high-voltage operational amplifiers, switching regu-
lators, converters,deflection stages and high fidelity amplifiers.
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
B
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current
Collector Power Dissipation@T
C
=25℃
Junction Temperature
Storage Temperature
VALUE
250
175
6
1.0
5.0
1.0
35
200
-65~200
UNIT
V
V
V
A
A
A
W
℃
℃
P
C
T
J
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
5.0
UNIT
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2N3583
MAX
UNIT
V
CEO(SUS)
Collector-Emitter Sustaining Voltage
I
C
= 200mA ; I
B
= 0
175
V
V
CE
(sat)
V
BE(
on
)
I
CEO
I
CEX
Collector-Emitter Saturation Voltage
I
C
= 1A; I
B
= 0.125A
B
5.0
V
Base-Emitter On Voltage
I
C
= 1A ; V
CE
= 10V
1.4
V
Collector Cutoff Current
V
CE
= 150V; I
B
= 0
V
CE
= 225V; V
BE(
off
)
= 1.5V
V
CE
= 225V; V
BE(
off
)
= 1.5V,T
C
=150℃
V
EB
= 6V; I
C
=0
10
1.0
3.0
5.0
mA
Collector Cutoff Current
mA
I
EBO
Emitter Cutoff Current
mA
h
FE-1
DC Current Gain
I
C
= 0.1A ; V
CE
= 10V
40
h
FE-2
DC Current Gain
I
C
= 0.5A ; V
CE
= 10V
40
200
h
FE-3
DC Current Gain
I
C
= 1A ; V
CE
= 10V
10
isc Website：www.iscsemi.cn
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