The 2N3636 and 2N3637 are PNP transistors mounted in TO-39 metal case.
They are intended for high voltage switching and Low Power Amplifier.
Compliance to RoHS
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEO
V
CBO
V
EBO
I
C
Ratings
Collector-Emitter Voltage (I
b
= 0)
Collector-Base Voltage (I
e
= 0)
Emitter-Base Voltage (I
c
= 0)
Collector Current
T
amb
= 25°C
Value
-175
-175
-5
-1
1
Unit
V
V
V
A
P
D
Total Power Dissipation
T
case
= 25°C
5
200
-65 to +200
-65 to +150
W
T
J
T
Stg
T
amb
Junction Temperature
°C
°C
°C
Storage Temperature Range
Operating Ambient Temperature
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
I
CBO
I
EBO
V
CEO
V
CBO
V
EBO
Ratings
Collector Cutoff
Current
Emitter Cutoff Current
Collector Emitter
Breakdown Voltage
(*)
Collector Base
Breakdown Voltage
Emitter Base
Breakdown Voltage
Test Condition(s)
V
CB
= -100 V, I
E
=0
V
EB
= -3 V, I
C
=0
I
C
= -10 mA, I
B
=0
I
C
= -100 µA, I
E
=0
I
E
= -10 mA, I
C
=0
COMSET SEMICONDUCTORS
Min
-
-
-175
-175
-5
Typ
-
-
-
-
-
Max
-100
-50
-
-
-
Unit
nA
nA
V
V
V
1/3
21/09/2012
PNP 2N3636 – 2N3637
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
2N3636
I
C
= -0.1 mA
V
CE
= -10 V
2N3637
2N3636
I
C
= -1 mA
V
CE
= -10 V
2N3637
2N3636
I
C
= -10 mA
V
CE
= -10 V
2N3637
2N3636
I
C
= -50 mA
V
CE
= -10 V
2N3637
2N3636
I
C
= -150 mA
V
CE
= -10 V
2N3637
I
C
= -10 mA, I
B
= -1 mA
I
C
= -50 mA, I
B
= -5 mA
I
C
= -10 mA, I
B
= -1 mA
I
C
= -50 mA, I
B
= -5 mA
I
C
= -30 mA, V
CE
= -30 V 2N3636
f = 100 MHz
2N3637
I
E
= 0, V
CB
= -20 V, f = 100 kHz
I
C
= 0, V
EB
= -1 V, f = 100 kHz
Min
40
80
45
90
50
100
50
100
25
50
-
-
-
-
150
200
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
-
-
-
-
-
-
150
300
-
-
0.3
0.5
0.8
0.9
-
-
10
75
Unit
h
FE
DC Current Gain (*)
-
V
CE(SAT)
V
BE(SAT)
f
T
C
ob
C
ib
Collector-Emitter
saturation Voltage
(*)
Base-Emitter
saturation Voltage
(*)
Transition frequency
Output Capacitance
Input Capacitance
V
V
MHz
pF
PF
SWITCHING TIMES
Symbol
t
on
t
off
Turn-on time
Turn-off time
Ratings
I
C
= -50 mA, I
B1
= -I
B2
= -5 mA
V
CC
= 100 V, C
BE
= 4 V
Value
400
600
Unit
ns
(*) Pulse conditions : tp < 300
µs, δ
=1.5%
21/09/2012
COMSET SEMICONDUCTORS
2/3
PNP 2N3636 – 2N3637
MECHANICAL DATA CASE TO-39
DIMENSIONS (mm)
min
max
9.39
8.50
6.60
0.53
0.88
2.66
5.33
0.86
1.02
-
48°
A
B
C
D
E
F
G
H
J
K
L
8.50
7.74
6.09
0.40
-
2.41
4.82
0.71
0.73
12.70
42°
Pin 1 :
Pin 2 :
Pin 3 :
Case :
Emitter
Base
Collector
Collector
Revised August 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and
all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical
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