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2N3866AUB

Description
NPN SILICON HIGH-FREQUENCY TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size133KB,4 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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2N3866AUB Overview

NPN SILICON HIGH-FREQUENCY TRANSISTOR

2N3866AUB Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-CDSO-N3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)0.4 A
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
JESD-30 codeR-CDSO-N3
Number of components1
Number of terminals3
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
surface mountYES
Terminal formNO LEAD
Terminal locationDUAL
Transistor component materialsSILICON
Base Number Matches1
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
NPN SILICON
HIGH-FREQUENCY TRANSISTOR
Qualified per MIL-PRF-19500/398
DEVICES
LEVELS
2N3866
2N3866A
2N3866UB
2N3866AUB
JAN
JANTX
JANTXV
JANS
ABSOLUTE MAXIMUM RATINGS
(T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
@ T
A
= +25°C
2N3866, A
2N3866UB / AUB
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
T
T
j
, T
stg
R
θJC
Value
30
60
305
400
1.0
0.5
-65 to +200
60.0
Unit
Vdc
Vdc
Vdc
mAdc
W
°C
°C/W
TO-39 (TO-205AD)
2N3866, 2N3866A
Operating & Storage Junction Temperature Range
Thermal Resistance, Junction-to-Case
NOTE:
1. Derate linearly 5.71mW/°C (2N3866, 2N3866A) and 3.08mW/°C (2N3866UB /
2N3866AUB) above T
A
> +25°C
2. T
A
= room ambient as defined in the general requirements of MIL-PRF-19500
3. P
T
= 2.9W at T
C
= +25°C, derate at 16.6mW/°C above T
C
> +25°C
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Symbol
Min.
Max.
Unit
Collector-Emitter Breakdown Voltage
I
C
= 5.0mAdc
Collector-Base Breakdown Voltage
I
C
= 100µAdc
Emitter-Base Breakdown Voltage
I
E
= 100µAdc
Collector-Emitter Cutoff Current
V
CE
= 28Vdc
Collector-Emitter Cutoff Current
V
CE
= 55Vdc
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CEO
I
CES1
30
60
3.5
20
100
Vdc
Vdc
Vdc
μAdc
μAdc
UB Package
2N3866UB, 2N3866AUB
T4-LDS-0175 Rev. 1 (101096)
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