01/99
B-9
2N4117, 2N4117A, 2N4118, 2N4118A, 2N4119, 2N4119A
N-Channel Silicon Junction Field-Effect Transistor
¥ Audio Amplifiers
¥ Ultra-High Input Impedance
Amplifiers
Absolute maximum ratings at T
A
= 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating (to 175°C)
– 40 V
50 mA
300 mW
2 mW/°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
2N4117, 2N4118, 2N4119
2N4117A, 2N4118A, 2N4119A
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
2N4117, 2N4118, 2N4119
2N4117A, 2N4118A, 2N4119A
Dynamic Electrical Characteristics
Common Source Forward
Transconductance
Common Source Output Conductance
Common Source Input Capacitance
Common Source Reverse
Transfer Capacitance
g
fs
g
os
C
iss
C
rss
V
(BR)GSS
I
GSS
V
GS(OFF)
I
GSS
2N4117
2N4117A
Min
– 40
– 10
–1
– 0.6
0.03
0.015
– 1.8
0.09
0.09
Max
2N4118
2N4118A
Min
– 40
– 10
–1
–1
0.08
0.08
–3
0.24
0.24
Max
2N4119
2N4119A
Min
– 40
– 10
–1
–2
0.2
0.2
–6
0.6
0.6
Max
Unit
V
pA
pA
V
mA
mA
Process NJ01
Test Conditions
I
G
= – 1µA, V
DS
= ØV
V
GS
= – 20V, V
DS
= ØV
V
GS
= – 20V, V
DS
= ØV
V
DS
= 10V, I
D
= 1 nA
V
DS
= 10V, V
GS
= ØV
V
DS
= 10V, V
GS
= ØV
70
210
3
3
1.5
80
250
5
3
1.5
100
330
10
3
1.5
µS
µS
pF
pF
V
DS
= 10V, V
GS
= ØV
V
DS
= 10V, V
GS
= ØV
V
DS
= 10V, V
GS
= ØV
V
DS
= 10V, V
GS
= ØV
f = 1 kHz
f = 1 kHz
f = 1 MHz
f = 1 MHz
TOÐ72 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Case
www.interfet.com
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
01/99
B-11
2N4338, 2N4339
N-Channel Silicon Junction Field-Effect Transistor
¥
¥
¥
¥
Audio Amplifiers
Small Signal Amplifiers
Voltage-Controlled Resistors
Current Limiters & Regulators
Absolute maximum ratings at T
A
= 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating (to 175°C)
– 50 V
50 mA
300 mW
2mW/°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
Drain Cutoff Current
Dynamic Electrical Characteristics
Drain Source ON Resistance
Common Source
Forward Transconductance
Common Source Output Conductance
Common Source Input Capacitance
Common Source
Reverse Transfer Capacitance
Noise Figure
r
ds(on)
g
fs
g
os
C
iss
C
rss
NF
V
(BR)GSS
I
GSS
V
GS(OFF)
I
DSS
I
D(OFF)
2N4338
Min
– 50
– 100
– 100
– 0.3
0.2
–1
0.6
0.05
(– 5)
Max
2N4339
Min
– 50
– 100
– 100
– 0.6 – 1.8
0.5
1.5
0.05
(– 5)
Max
Unit
V
pA
nA
V
mA
nA
V
Process NJ16
Test Conditions
I
G
= – 1 µA, V
DS
= ØV
V
GS
= – 30V, V
DS
= ØV
V
GS
= – 30V, V
DS
= ØV
V
DS
= 15V, I
D
= 0.1 µA
V
DS
= 15V, V
GS
= ØV
V
DS
= 15V, V
GS
= ( )
T
A
= 150°C
2500
1700
Ω
µS
µS
pF
pF
dB
V
GS
= ØV, I
D
= Ø A
V
DS
= 15V, V
GS
= ØV
V
DS
= 15V, V
GS
= ØV
V
DS
= 15V, V
GS
= ØV
V
DS
= 15V, V
GS
= ØV
V
DS
= 15V, V
GS
= ØV
R
G
= 1 MΩ, BW = 200 Hz
f = 1 kHz
f = 1 kHz
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 1 kHz
600 1800 800 2400
5
7
3
1
15
7
3
1
TOÐ18 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate & Case
www.interfet.com
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
B-12
01/99
2N4340, 2N4341
N-Channel Silicon Junction Field-Effect Transistor
¥ Small Signal Amplifiers
¥ Current Regulators
¥ Voltage-Controlled Resistors
Absolute maximum ratings at T
A
= 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating (to 175°C)
– 50 V
50 mA
300 mW
2mW/°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
Drain Cutoff Current
Dynamic Electrical Characteristics
Drain Source ON Resistance
Common Source
Forward Transconductance
Common Source Output Conductance
Common Source Input Capacitance
Common Source
Reverse Transfer Capacitance
Noise Figure
r
ds(on)
g
fs
g
os
C
iss
C
rss
NF
V
(BR)GSS
I
GSS
V
GS(OFF)
I
DSS
I
D(OFF)
2N4340
Min
– 50
– 100
– 100
–1
1.2
–3
3.6
0.05
(– 5)
Max
2N4341
Min
– 50
– 100
– 100
–2
3
–6
9
Max
Unit
V
pA
nA
V
mA
Process NJ16
Test Conditions
I
G
= – 1 µA, V
DS
= ØV
V
GS
= – 30V, V
DS
= ØV
V
GS
= – 30V, V
DS
= ØV
V
DS
= 15V, I
D
= 0.1 µA
V
DS
= 15V, V
GS
= ØV
V
DS
= 15V, V
GS
= ( )
T
A
= 150°C
0.07 nA
(– 10) V
1500
800
Ω
µS
µS
pF
pF
dB
V
GS
= ØV, I
D
= Ø A
V
DS
= 15V, V
GS
= ØV
V
DS
= 15V, V
GS
= ØV
V
DS
= 15V, V
GS
= ØV
V
DS
= 15V, V
GS
= ØV
V
DS
= 15V, V
GS
= ØV
R
G
= 1 MΩ, BW = 200 Hz
f = 1 kHz
f = 1 kHz
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 1 kHz
1300 3000 2000 4000
30
7
3
1
60
7
3
1
TOÐ18 Package
Dimensions in Inches (mm)
Surface Mount
SMP4340, SMP4341
Pin Configuration
1 Source, 2 Drain, 3 Gate & Case
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
www.interfet.com
01/99
B-17
2N4867, 2N4867A, 2N4868, 2N4868A, 2N4869, 2N4869A
N-Channel Silicon Junction Field-Effect Transistor
¥ Audio Amplifiers
Absolute maximum ratings at T
A
= 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage
Gate Current
Continuous Device Power Dissipation
Power Derating
Storage Temperature Range
– 40 V
50 mA
300mW
1.7 mW/°C
– 65°C to + 200°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
Dynamic Electrical Characteristics
Common Source Forward
Transconductance
Common Source Output Conductance
Common Source Input Capacitance
Common Source Reverse
Transfer Capacitance
Equivalent Short Circuit
Input Noise Voltage
Noise Figure
g
fs
g
os
C
iss
C
rss
e
N
¯
V
(BR)GSS
I
GSS
V
GS(OFF)
I
DSS
2N4867
2N4867A
Min
– 40
– 0.25
– 0.25
– 0.7
0.4
–2
1.2
Max
2N4868
2N4868A
Min
– 40
– 0.25
– 0.25
–1
1
–3
3
Max
2N4869
2N4869A
Min
– 40
– 0.25
– 0.25
– 1.8
2.5
–5
7.5
Max
Unit
V
nA
µA
V
mA
Process NJ16
Test Conditions
I
G
= – 1µA, V
DS
= ØV
V
GS
= – 30V, V
DS
= ØV
V
GS
= – 30V, V
DS
= ØV
V
DS
= 20V, I
D
= 1 µA
V
DS
= 20V, V
GS
= ØV
T
A
= 150°C
700
2000
1.5
25
5
20
10
1
1000
3000
4
25
5
20
10
1
1300
4000
10
25
5
20
10
1
µS
µS
pF
pF
nV/√HZ
nV/√HZ
V
DS
= 20V, V
GS
= ØV
V
DS
= 20V, V
GS
= ØV
V
DS
= 20V, V
GS
= ØV
V
DS
= 20V, V
GS
= ØV
V
DS
= 10V, V
GS
= ØV
V
DS
= 10V, V
GS
= ØV
V
DS
= 10V, V
GS
= ØV
f = 1 kHz
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 10 Hz
f = 1 kHz
f = 1 kHz
NF
dB
(2N4867, 68, 69)
R
G
= 20 kΩ
(2N4867A, 68A, 69A)
R
G
= 5 kΩ
TOÐ72 Package
Dimensions in Inches (mm)
Surface Mount
SMP4867, SMP4867A, SMP4868,
SMP4868A, SMP4869, SMP4869A
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Case
www.interfet.com
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
01/99
B-25
2N6451, 2N6452
N-Channel Silicon Junction Field-Effect Transistor
¥ Audio Amplifiers
¥ Low-Noise, High Gain
Amplifiers
¥ Low-Noise Preamplifiers
Absolute maximum ratings at T
A
= 25¡C
Reverse Gate Source Voltage
Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
2N6451
2N6452
– 20 V
– 25 V
– 20 V
– 25 V
10 mA
10 mA
360 mW
360 mW
2.88 mW/°C 2.88 mW/°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
V
(BR)GSS
2N6451
Min
– 20
– 0.1
Max
2N6452
Min
– 25
– 0.5
Max
Unit
V
nA
nA
µA
–1
µA
V
mA
Process NJ132L
Test Conditions
I
G
= – 1 µA, V
DS
= ØV
V
GS
= – 10V, V
DS
= ØV
V
GS
= – 15V, V
DS
= ØV
V
GS
= – 10V, V
DS
= ØV
V
GS
= – 15V, V
DS
= ØV
V
DS
= 10V, I
D
= 0.5 nA
V
DS
= 10V, V
GS
= ØV
T
A
= 125°C
T
A
= 125°C
Gate Reverse Current
I
GSS
– 0.2
– 0.5 – 3.5 – 0.5 – 3.5
5
20
5
20
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
Dynamic Electrical Characteristics
Common Source
Forward Transmittance
Common Source
Output Conductance
Common Source
Input Capacitance
Common Source Reverse
Transfer Capacitance
Equivalent Short Circuit
Input Noise Voltage
Noise Figure
V
GS(OFF)
I
DSS
| Y
fs
|
| Y
os
|
C
iss
C
rss
e
N
¯
NF
15
30
50
25
5
5
3
1.5
15
30
50
25
5
mS
mS
µS
µS
pF
pF
pF
pF
V
DS
= 10V, I
D
= 5 mA
V
DS
= 10V, I
D
= 15 mA
V
DS
= 10V, I
D
= 5 mA
V
DS
= 10V, I
D
= 15 mA
V
DS
= 10V, I
D
= 5 mA
V
DS
= 10V, I
D
= 15 mA
V
DS
= 10V, I
D
= 5 mA
V
DS
= 10V, I
D
= 15 mA
V
DS
= 10V, I
D
= 5 mA
V
DS
= 10V, I
D
= 5 mA
V
DS
= 10V, I
D
= 5 mA
R
G
= 10 kΩ
f = 1 kHz
f = 1 kHz
f = 1 kHz
f = 1 kHz
f = 1 kHz
f = 1 kHz
f = 1 kHz
f = 1 kHz
f = 10 kHz
f = 1 kHz
f = 10 Hz
10
nV/√Hz
8
2.5
nV/√Hz
dB
TOÐ72 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Case
www.interfet.com
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
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