ILC9-65608V-70 datasheet, PDF - EEWORLD Datasheet

ILC9-65608V-70: DescriptionStandard SRAM, 128KX8, 70ns, CMOS, CDIP32,; Categorystorage storage; File Size519KB，10 Pages; ManufacturerAtmel (Microchip)

Download Datasheet Parametric View All

ILC9-65608V-70 Overview

Standard SRAM, 128KX8, 70ns, CMOS, CDIP32,

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Reach Compliance Code	unknown
Maximum access time	70 ns
I/O type	COMMON
JESD-30 code	R-CDIP-T32
JESD-609 code	e0
memory density	1048576 bit
Memory IC Type	STANDARD SRAM
memory width	8
Number of functions	1
Number of ports	1
Number of terminals	32
word count	131072 words
character code	128000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	128KX8
Output characteristics	3-STATE
Exportable	YES
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DIP
Encapsulate equivalent code	DIP32,.4
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	3.3 V
Certification status	Not Qualified
Maximum standby current	0.00004 A
Minimum standby current	2 V
Maximum slew rate	0.04 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	NO
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

Popular Components