,
Lf nc.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
TYPES 2N4998, 2N5000,
2NS148, 2N5150
N-P-N
SILICON POWER TRANSISTORS
HIGH-FREQUENCY POWER TRANSISTORS WITH
COMPUTER-DESIGNED ISOTHERMAL GEOMETRY
For Complementary Ute With 2N4999,2N5001, 2N5147, and 2N6149
6 mJ Revert* Energy Rating with IQ - 6 A and 4 V Ravarta Bias
•mechanical data
IN4MB, ZNMM
ALL TERMINAL* ARE INSULATED FROM THE CASE
ALL JEDEC TO-SB DIMENSIONS AND NOT8S ARE APPLICABLE
NOTES; A, Within txii dlmantlpn. MM dlamatw may vary.
B. Position of twmlnalt with ratpact to haxagon It not controlled.
C. Tha eat4 tamparaiura may ba maaaurad anywhara on tha mtlng plana within
O.IZSInch of th>nud.
D. All dlman.loni <ra In Inehat unlaat otnarwM ipaolflad.
2N514E, 2N81BO
THE COLLECTO R 1$ IN ELECTRICAL CONTACT WITH THE CASE
ALL bIHINtlONi *•« IN IHCHtl
UHLI1I OTHIIVIII VtCIPIIa.
ALL JEDEC TO-39 DIMENSIONS AND NOTES ARE APPLICABLE
absolute maximum ratings at 25°C case temperature (unleu otherwise noted)
2N4998
2NSOOO
Collector-Base Voltage
Collector-Emitter Voltage
(Set
Not* 1)
Emitter-Bale Voltage
Continuous Collector Current
. . ,
Peak Collector Current (Sea Note 2)
.
Continuous Base Current
Safe Operating Areas
Continuous Device Dissipation at 50°C Case Temperature (See Note 3)
Continuous Device Dissipation at 100°C Case Temperature (See Note 3)
Continuous Device Dissipation at (or below) 25°C Free-Air Temperature (See Note 4)
Undamped Inductive Load Energy (See Note 5)
Operating Collector Junction Temperature Range
Storage Temperature Range
Lead or Terminal Temperature 1/8 Inch from Case for 60 Seconds
NOTES: 1.
2.
3.
4.
2N5148
2NS150
. .
•«
100 V*
••
. .
. .
«
«
80V
6V
2 A'
5 A'
1 A'
f
»
2 A'
SA*
1 A'
Sea Figures 7* and B
30 W*
6W*
20 W
4W
2W
1 W
+
^emJ-^—•
-65°C to 200°C*
-65°C W200°C*
•
300°C*
»•
Thli value IppllMwhtn thl DM«-»mlit«r diode i» Qpvn-circuiHd.
Thit v*lu« ipplln for tw < B.3
mt,
duty cvcl* < 1 %•
For optritlon abttva (or b«low) 5O°C CM! Mmpiraturv, r«1»r to DlHlpvtion Darkling CurvM Flgur» 9 and 10.
o*r»u llnHrly to 200°C fr«*-«lr timpcratvr* it tr>« r«t* of M.d mw/^C Tor 2NA9fia and ZNaadO, S.7 mW/'c for 2N514B ind
2N91EO.
B. This ritlng It p«Md on tft* eap*blllty ol th« trtntlnort to opwat* Hf«lv in thi unclampad indufitlw* load circuit ot Stctlon 3.2 of
th. forthcoming J6DEC publication
Sufgtsltd Standards on Power Tnrutuonl.
L-o.4BmH, R
B B 1
-2Qn. Hg
u
-100(),
V B B I - I O v. v
B B
j - 4 V.HI,-0.1 n, v
cc
- 10 v, ICM - • *• energy -
\f3ui.
'JEOEC raglttarad data. Thla data thaat contalni all applieabla ragistarad data In affaet at tha tlma of publication.
T
Thl* circuit appaan on pag« B-1 of thlt data book.
NJ Semiconductors reserves the nght to change test conditions, parameters limits and package dimensions without
not,ce mfonnation ftim.shed by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to
press However NJ Sem.-Conductors assumes no responsibility for any errors or omissions discovered in its use N J
Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
TYPES 2N4998, 2NSOOO, 2NS148, ZN5150
N-P-N SILICON POWER TRANSISTORS
"electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
Collector-Emitter
TEST CONDITIONS
2N4S98
2N5141
MIN
MAX
2NBOOO
2NS1BO
MIN
SO
MAX
UNIT
VIBRICEO
'CEO
ICES
'CEV
'EBO
Br
.,
kttown Volt
^
1C" 100mA,
Ifl'O,
See Note 6
80
50
1
1
500
1
1
20
V
50
1
500
1
uA
Collector Cutoff Curftnt
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
VCE • 40 v.
VCE - 60 v.
IB - o
V
BE
- o
1 MA
V
C6
- 100 V, V
BE
- 0
mA
HA
vce • eo v,
VEB-SV,
Vf,
B
- 6 V .
V
C6
V
BE
* -2 v. T
C
- iso°c
ie-o
Ic - 0
Ic • 50 mA
1 CA
mA
"5V,
50
9O
70
30
18
36
1.2
1.2
1.5
1.5
3
0.46
0.8S
hep
Static Forwerd Current
Transfer Ritio
V
CE
- 5 V .
V
C
e - S V,
V
CE
IC-<
A
Ic -
1
A
>C " 3 A
See Notes
Band?
30
15
5
200
"
5v
'
V
CE
- 5 V .
IB- 100 mA,
IC-'
A
-
Ic- 1 A
TC--SS°C
Set Note*
6 and 7
ts
1,5
1.5
3
0.46
0.8S
VBE
Bast-Emitter Volttgt
l
a
-200mA.
VCE - 5 V,
IC-2A
'C • 2
A
V
VcElsat)
Sa
,
uraticm
Cot lector -E mitter
voltage
VCE-BV,
IB -100mA.
I
B
-200mA,
!
B
-600mA,
IC-SA
IC-'A
Ic-ZA
lc-3A
S*e Notts
6 end 7
V
S
5
hf.
Small-Signal
Common-Emitter
Forward Currant
Transfer Ratio
Small-Signal
Common-Emitter
Forward Current
Transfer Ratio
Common-Base
Open-Circuit
Output Capacitance
6. Th«M
pmr»mm*»rt
mui
7
Thin pejram«itir*
vm
r
Inch from th* davic* b
VCE - 5 v ,
IC-O.IA,
t-ikHj
20
SO
h«.
VCE - 5 v ,
IC-O.SA,
f»20MHi
25
3
*-obo
NOTES^
VCB-IOV,
IE-O.
I-IMHZ
=• 300 Ui, d
»f »t* fro
70
70
Pf
*r*>d u»infl pulM tcch
jvith vouio*-t*i\ttng c
orrvino corvticti »nd loc»i*d wlihin 0.125
"JEOEC ragiti*r*d dal«
thermal characteristics
PARAMETER
^(JJC
RHJA
Junction-to-Case Thermal Resistance
Junction-io-Free-Air Thermal Resistanca
2N40M
2N6OOO
MAX
5
87.5
2N514«
2N516O
MAX
25
175
UNIT
"C/W
switching characteristics at 25° C
cate
temperature
PARAMETER
ton
tgff
Turn-On Time
Turn-Off Time
1C - 2 A,
VBEIoffl • '3.7 V.
TEST CONDITIONS'
Ip j i j - 200mA,
H
L
-15ll,
v with
Tr*nsittor
pBrw
Igj2) - -200mA,
See Figure 1
ALL TYPES
TVP
0.1
1.1
»>
UNIT
f VOstJg* and current va.uni
shown
are nominal;
*xact v
Power technology
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