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2N5655

Description
Silicon NPN Power Transistors
File Size40KB,3 Pages
ManufacturerJinmei
Websitehttp://www.jmnic.com/
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2N5655 Overview

Silicon NPN Power Transistors

Product Specification
www.jmnic.com
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-126 package
・High
breakdown voltage
APPLICATIONS
・For
use in line-operated equipment
such as audio output amplifiers;
low-current ,high-voltage converters;
and AC line relays
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
2N5655 2N5656 2N5657
Absolute maximum ratings(Ta=25
℃)
SYMBOL
PARAMETER
2N5655
V
CBO
Collector-base voltage
2N5656
2N5657
2N5655
V
CEO
Collector-emitter voltage
2N5656
2N5657
V
EBO
I
C
I
CM
I
B
P
D
T
j
T
stg
Emitter-base voltage
Collector current
Collector current-Peak
Base current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
Open emitter
CONDITIONS
VALUE
250
300
350
275
325
375
6
0.5
1.0
0.25
20
150
-65~150
V
A
A
A
W
V
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
6.25
UNIT
℃/W
JMnic

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