Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2N5838 2N5839 2N5840
DESCRIPTION
・With
TO-3 package
・Low
collector-emitter saturation voltage
APPLICATIONS
・For
use in switching power supply applications
and other inductive switching circuits.
PINNING
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
℃)
SYMBOL
PARAMETER
2N5838
V
CBO
Collector-base voltage
2N5839
2N5840
2N5838
V
CEO
Collector-emitter voltage
2N5839
2N5840
V
EBO
I
C
P
D
T
j
T
stg
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
Open emitter
CONDITIONS
VALUE
275
300
375
250
275
350
6
3
100
150
-65~200
V
A
W
℃
℃
V
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
1.25
UNIT
℃/W
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
2N5838
V
CEO
Collector-emitter
sustaining voltage
2N5839
2N5840
V
CEsat
V
BEsat
I
CBO
I
CEV
I
EBO
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
2N5838
h
FE
DC current gain
2N5839/5840
f
T
Transition frequency
I
C
=2A ; V
CE
=3V
I
C
=2A; I
B
=0.4A
I
C
=2A; I
B
=0.4A
V
CB
=Rated V
CBO
; I
E
=0
I
C
=0.1A ;I
B
=0
2N5838 2N5839 2N5840
CONDITIONS
MIN
250
275
350
TYP.
MAX
UNIT
V
0.8
1.5
1.0
1.0
1.0
8
10
5
40
50
V
V
mA
mA
mA
V
CE
= Rated V
CEO
; V
BE(off)
=1.5V
V
EB
=5V; I
C
=0
I
C
=3A ; V
CE
=3V
I
C
=1A ; V
CE
=10V;f=1.0MHz
MHz
JMnic
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