Product Specification
www.jmnic.com
Silicon PNP Power Transistors
DESCRIPTION
・With
TO-66 package
・Low
collector-emitter saturation voltage
・Excellent
safe operating area
・Complement
to type 2N6372 2N6373 2N6374
APPLICATIONS
・Designed
for driver circuits,switching
and amplifier applications
PINNING
PIN
1
2
3
Base
Emitter
Collector
DESCRIPTION
2N5954 2N5955 2N5956
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=
℃)
SYMBOL
PARAMETER
2N5954
V
CBO
Collector-base voltage
2N5955
2N5956
2N5954
V
CEO
Collector-emitter voltage
2N5955
2N5956
V
EBO
I
C
I
B
P
D
T
j
T
stg
Emitter-base voltage
Collector current
Base current
Total Power Dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
Open emitter
CONDITIONS
VALUE
90
70
50
80
60
40
5
6
2
40
150
-65~200
V
A
A
W
℃
℃
V
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
4.3
UNIT
℃/W
JMnic
Product Specification
www.jmnic.com
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
2N5954
V
CEO(sus)
Collector-emitter
sustaining voltage
2N5955
2N5956
2N5954
V
CEsat
Collector-emitter
saturation voltage
2N5955
2N5956
2N5954
V
BE-1
Base-emitter on voltage
2N5955
2N5956
V
BE-2
Base-emitter on voltage
2N5954
I
CEO
Collector cut-off current
2N5955
2N5956
I
CEV
I
EBO
Collector cut-off current(R
BE
=100Ω)
Emitter cut-off current
2N5954
h
FE-1
DC current gain
2N5955
2N5956
h
FE-2
f
T
DC current gain
Transition frequency
I
C
=2A; I
B
=0.2A
I
C
=2.5A; I
B
=0.25A
I
C
=3A; I
B
=0.3A
I
C
=2A ; V
CE
=4V
I
C
=2.5A ; V
CE
=4V
I
C
=3A ; V
CE
=4V
I
C
=6A ; V
CE
=4V
V
CE
=65V; I
B
=0
V
CE
=45V; I
B
=0
V
CE
=25V; I
B
=0
I
C
=0.1A ;I
B
=0
2N5954 2N5955 2N5956
CONDITIONS
MIN
80
60
40
TYP.
MAX
UNIT
V
1.0
V
2.0
V
3.0
V
1.0
mA
V
CE
=Rated V
CE
; V
BE(off)
=1.5V
T
C
=150℃
V
EB
=5V; I
C
=0
I
C
=2A ; V
CE
=4V
I
C
=2.5A ; V
CE
=4V
I
C
=3A ; V
CE
=4V
I
C
=6A ; V
CE
=4V
I
C
=1A;V
CE
=4V;f=1.0MHz
5
5
20
0.1
2.0
0.1
mA
mA
100
MHz
JMnic
京公网安备 11010802033920号
EEWORLD
