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2N60G-TN3-R

Description
POWER, FET
CategoryDiscrete semiconductor    The transistor   
File Size305KB,7 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Download Datasheet Parametric View All

2N60G-TN3-R Overview

POWER, FET

2N60G-TN3-R Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerUNISONIC TECHNOLOGIES CO.,LTD
Parts packaging codeTO-252
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts4
Reach Compliance Codecompli
Avalanche Energy Efficiency Rating (Eas)140 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage600 V
Maximum drain current (Abs) (ID)2 A
Maximum drain current (ID)2 A
Maximum drain-source on-resistance5 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)13 pF
JEDEC-95 codeTO-252
JESD-30 codeR-PSSO-G2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)44 W
Maximum pulsed drain current (IDM)8 A
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)180 ns
Maximum opening time (tons)115 ns
UNISONIC TECHNOLOGIES CO., LTD
2N60
2A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC
2N60
is a high voltage power MOSFET and
is designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance
and have a high rugged avalanche characteristics. This
power MOSFET is usually used at high speed switching
applications in power supplies, PWM motor controls,
high efficient DC to DC converters and bridge circuits.
FEATURES
* R
DS(ON)
< 5Ω@ V
GS
= 10V, I
D
=1A
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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