UNISONIC TECHNOLOGIES CO., LTD
2N60
2A, 600V N-CHANNEL POWER
MOSFET
DESCRIPTION
The UTC
2N60
is a high voltage power MOSFET and is
designed to have better characteristics, such as fast switching time,
low gate charge, low on-state resistance and have a high rugged
avalanche characteristics. This power MOSFET is usually used at
high speed switching applications in power supplies, PWM motor
controls, high efficient DC to DC converters and bridge circuits.
1
Power MOSFET
1
TO-220
1
TO-220F
1
TO-220F1
TO-262
FEATURES
* R
DS(ON)
= 5Ω@V
GS
= 10V
* Ultra Low gate charge (typical 9.0nC)
* Low reverse transfer capacitance (C
RSS
= typical 5.0 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
1
TO-251
1
TO-252
1
1
TO-126
TO-251L
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
2N60L-TA3-T
2N60G-TA3-T
2N60L-TF1-T
2N60G-TF1-T
2N60L-TF3-T
2N60G-TF3-T
2N60L-TM3-T
2N60G-TM3-T
2N60L-TMA-T
2N60G-TMA-T
2N60L-TN3-R
2N60G-TN3-R
2N60L-TN3-T
2N60G-TN3-T
2N60L-T2Q-T
2N60G-T2Q-T
2N60L-T60-K
2N60G-T60-K
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-220F1
TO-220F
TO-251
TO-251L
TO-252
TO-252
TO-262
TO-126
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
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1 of 6
QW-R502-053.P
2N60
ABSOLUTE MAXIMUM RATINGS
(
T
C
= 25°С, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
600
V
Gate-Source Voltage
V
GSS
±30
V
Avalanche Current (Note 2)
I
AR
2.0
A
2.0
A
Continuous
I
D
Drain Current
Pulsed (Note 2)
I
DM
8.0
A
140
mJ
Single Pulsed (Note 3)
E
AS
Avalanche Energy
Repetitive (Note 2)
E
AR
4.5
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220/ TO-262
54
W
P
D
TO-220F/TO-220F1
23
W
Power Dissipation
TO-251/TO-251L/TO-252
(T
C
= 25°С)
44
W
TO-126
40
W
Junction Temperature
T
J
+150
°С
Operating Temperature
T
OPR
-55 ~ +150
°С
Storage Temperature
T
STG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by T
J
3. L=64mH, I
AS
=2.0A, V
DD
=50V, R
G
=25
Ω,
Starting T
J
= 25°C
4. I
SD
≤2.4A,
di/dt≤200A/μs, V
DD
≤
BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
PACKAGE
TO-220/ TO-262
TO-220F/TO-220F1
Junction to Ambient
TO-251/TO-251L/TO-252
TO-126
TO-220/ TO-262
TO-220F/TO-220F1
Junction to Case
TO-251/TO-251L/TO-252
TO-126
PARAMETER
SYMBOL
θ
JA
RATINGS
62.5
62.5
100
89
2.32
5.5
2.87
3.12
UNIT
°С/W
°С/W
°С/W
°С/W
°С/W
°С/W
°С/W
°С/W
θ
Jc
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2 of 6
QW-R502-053.P
2N60
ELECTRICAL CHARACTERISTICS
(T
J
=25°С, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
SYMBOL
BV
DSS
I
DSS
TEST CONDITIONS
Power MOSFET
MIN TYP MAX UNIT
V
GS
= 0V, I
D
= 250μA
600
V
V
DS
= 600V, V
GS
= 0V
10
μA
100 nA
Forward
V
GS
= 30V, V
DS
= 0V
Gate-Source Leakage Current
I
GSS
Reverse
V
GS
= -30V, V
DS
= 0V
-100 nA
Breakdown Voltage Temperature Coefficient
△BV
DSS
/
△
T
J
I
D
=250μA, Referenced to 25°C
0.4
V/°С
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
= V
GS
, I
D
= 250μA
2.0
4.0
V
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
= 10V, I
D
=1A
3.6
5
Ω
DYNAMIC CHARACTERISTICS
270 350 pF
Input Capacitance
C
ISS
V
DS
=25V, V
GS
=0V,
Output Capacitance
C
OSS
40
50
pF
f =1MHz
Reverse Transfer Capacitance
C
RSS
5
7
pF
SWITCHING CHARACTERISTICS
10
30
ns
Turn-On Delay Time
t
D (ON)
Turn-On Rise Time
t
R
25
60
ns
V
DD
=300V, I
D
=2.4A,
R
G
=25Ω (Note 1, 2)
Turn-Off Delay Time
t
D(OFF)
20
50
ns
Turn-Off Fall Time
t
F
25
60
ns
Total Gate Charge
Q
G
9.0
11
nC
V
DS
=480V, V
GS
=10V,
Gate-Source Charge
Q
GS
1.6
nC
I
D
=2.4A (Note 1, 2)
Gate-Drain Charge
Q
GD
4.3
nC
DRAIN-SOURCE DIODE CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0 V, I
SD
= 2.0 A
1.4
V
Continuous Drain-Source Current
I
SD
2.0
A
Pulsed Drain-Source Current
I
SM
8.0
A
180
ns
Reverse Recovery Time
t
rr
V
GS
= 0 V, I
SD
= 2.4A,
di/dt = 100 A/μs (Note 1)
Reverse Recovery Charge
Q
RR
0.72
μC
Notes: 1. Pulse Test: Pulse width
≤
300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
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QW-R502-053.P
2N60
TEST CIRCUITS AND WAVEFORMS
+
V
DS
-
+
-
L
Power MOSFET
D.U.T.
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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QW-R502-053.P
2N60
TEST CIRCUITS AND WAVEFORMS (Cont.)
Power MOSFET
V
DS
90%
V
GS
10%
t
D(ON)
t
R
t
D(OFF)
t
F
Switching Test Circuit
Switching Waveforms
V
GS
Q
G
10V
Q
GS
Q
GD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BV
DSS
I
AS
I
D(t)
V
DD
V
DS(t)
t
p
Time
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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QW-R502-053.P
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