UNISONIC TECHNOLOGIES CO., LTD
2N60
2A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC
2N60
is a high voltage power MOSFET and
is designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance
and have a high rugged avalanche characteristics. This
power MOSFET is usually used at high speed switching
applications in power supplies, PWM motor controls,
high efficient DC to DC converters and bridge circuits.
FEATURES
* R
DS(ON)
< 5Ω@ V
GS
= 10V, I
D
=1A
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
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QW-R502-053.Z
2N60
ORDERING INFORMATION
1
G
G
G
G
G
G
G
G
G
G
G
G
G
G
G
S
2
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
S
Ordering Number
Package
Lead Free
Halogen Free
2N60L-TA3-T
2N60G-TA3-T
TO-220
2N60L-TF1-T
2N60G-TF1-T
TO-220F1
2N60L-TF2-T
2N60G-TF2-T
TO-220F2
2N60L-TF3-T
2N60G-TF3-T
TO-220F
2N60L-TF3T-T
2N60G-TF3T-T
TO-220F3
2N60L-TM3-T
2N60G-TM3-T
TO-251
2N60L-TMA-T
2N60G-TMA-T
TO-251L
2N60L-TMS-T
2N60G-TMS-T
TO-251S
2N60L-TMS2-T
2N60G-TMS2-T
TO-251S2
2N60L-TMS4-T
2N60G-TMS4-T
TO-251S4
2N60L-TN3-R
2N60G-TN3-R
TO-252
2N60L-TND-R
2N60G-TND-R
TO-252D
2N60L-T2Q-T
2N60G-T2Q-T
TO-262
2N60L-T60-K
2N60G-T60-K
TO-126
2N60L-T6C-K
2N60G-T6C-K
TO-126C
-
2N60G-E-K08-5060-R
DFN-8(5×6)
Note: Pin Assignment: G: Gate
D: Drain S: Source
Power MOSFET
Pin Assignment
3 4 5 6 7
S -
-
-
-
S -
-
-
-
S -
-
-
-
S -
-
-
-
S -
-
-
-
S -
-
-
-
S -
-
-
-
S -
-
-
-
S -
-
-
-
S -
-
-
-
S -
-
-
-
S -
-
-
-
S -
-
-
-
S -
-
-
-
S -
-
-
-
S G D D D
8
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
D
Packing
Tube
Tube
Tube
Tube
Tube
Tube
Tube
Tube
Tube
Tube
Tape Reel
Tape Reel
Tube
Bulk
Bulk
Tape Reel
MARKING
PACKAGE
TO-220
TO-220F
TO-220F1
TO-220F2
TO-220F3
TO-251
TO-251L
TO-251S
TO-251S2
TO-251S4
TO-252
TO-252D
TO-262
MARKING
TO-126
TO-126C
DFN-8(5×6)
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QW-R502-053.Z
2N60
ABSOLUTE MAXIMUM RATINGS
(
T
C
= 25°С, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
600
V
Gate-Source Voltage
V
GSS
±30
V
Avalanche Current (Note 2)
I
AR
2.0
A
2.0
A
Continuous
I
D
Drain Current
Pulsed (Note 2)
I
DM
8.0
A
140
mJ
Single Pulsed (Note 3)
E
AS
Avalanche Energy
Repetitive (Note 2)
E
AR
4.5
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
54
W
TO-220/ TO-262
TO-220F/TO-220F1
23
W
TO-220F3
TO-220F2
24
W
Power Dissipation
TO-251/TO-251L
P
D
(T
C
= 25°С)
TO-251S/TO-251S2
44
W
TO-251S4/TO-252
TO-252D
TO-126/TO-126C
40
W
DFN-8(5×6)
22
W
Junction Temperature
T
J
+150
°С
Operating Temperature
T
OPR
-55 ~ +150
°С
Storage Temperature
T
STG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by T
J
.
3. L=64mH, I
AS
=2.0A, V
DD
=50V, R
G
=25
Ω,
Starting T
J
= 25°C
4. I
SD
≤2.4A,
di/dt≤200A/μs, V
DD
≤
BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
PARAMETER
PACKAGE
TO-220/TO-220F
TO-220F1/TO-220F2
TO-220F3/TO-262
TO-251/TO-251L
TO-251S/TO-251S2
TO-251S4/TO-252
TO-252D
TO-126/TO-126C
DFN-8(5×6)
TO-220/ TO-262
TO-220F/TO-220F1
TO-220F3
TO-220F2
TO-251/TO-251L
TO-251S/TO-251S2
TO-251S4/TO-252
TO-252D
TO-126/TO-126C
DFN-8(5×6)
SYMBOL
RATINGS
62.5
UNIT
°С/W
Junction to Ambient
θ
JA
100
89
75
2.32
5.5
5.43
°С/W
°С/W
°С/W
°С/W
°С/W
°С/W
°С/W
°С/W
°С/W
Junction to Case
θ
JC
2.87
3.12
5.6
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QW-R502-053.Z
2N60
ELECTRICAL CHARACTERISTICS
(T
J
=25°С, unless otherwise specified)
SYMBOL
BV
DSS
TEST CONDITIONS
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Power MOSFET
MIN TYP MAX UNIT
V
10
μA
100
μA
100 nA
-100 nA
V/°С
4.0
5
350
50
13
60
55
120
60
50
V
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
A
A
ns
μC
V
GS
= 0V, I
D
= 250μA
600
V
DS
= 600V, V
GS
= 0V
Drain-Source Leakage Current
I
DSS
V
DS
= 480V, T
C
= 125°С
Forward
V
GS
= 30V, V
DS
= 0V
Gate-Source Leakage Current
I
GSS
Reverse
V
GS
= -30V, V
DS
= 0V
Breakdown Voltage Temperature Coefficient
△
BV
DSS
/
△
T
J
I
D
=250μA, Referenced to 25°C
0.4
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
= V
GS
, I
D
= 250μA
2.0
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
= 10V, I
D
=1A
3.6
DYNAMIC CHARACTERISTICS
300
Input Capacitance
C
ISS
V
DS
=25V, V
GS
=0V,
Output Capacitance
C
OSS
45
f =1MHz
Reverse Transfer Capacitance
C
RSS
10
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D (ON)
40
Turn-On Rise Time
t
R
35
V
DD
=300V, I
D
=2.4A,
R
G
=25Ω (Note 1, 2)
Turn-Off Delay Time
t
D(OFF)
90
Turn-Off Fall Time
t
F
50
40
Total Gate Charge
Q
G
V
DS
=480V, V
GS
=10V,
Gate-Source Charge
Q
GS
4.2
I
D
=2.4A (Note 1, 2)
Gate-Drain Charge
Q
GD
8.4
DRAIN-SOURCE DIODE CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0 V, I
SD
= 2.0 A
Continuous Drain-Source Current
I
SD
Pulsed Drain-Source Current
I
SM
180
Reverse Recovery Time
t
rr
V
GS
= 0 V, I
SD
= 2.4A,
di/dt = 100 A/μs (Note 1)
Reverse Recovery Charge
Q
RR
0.72
Notes: 1. Pulse Test: Pulse width
≤
300μs, Duty cycle≤2%.
2. Essentially independent of operating temperature.
1.4
2.0
8.0
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QW-R502-053.Z
2N60
TEST CIRCUITS AND WAVEFORMS
+
V
DS
-
+
-
L
Power MOSFET
D.U.T.
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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