UNISONIC TECHNOLOGIES CO., LTD
2N60L
2 Amps, 600/650 Volts
N-CHANNEL MOSFET
DESCRIPTION
The UTC
2N60L
is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged
avalanche characteristics. This power MOSFET is usually used at
high speed switching applications in power supplies, PWM motor
controls, high efficient DC to DC converters and bridge circuits.
Power MOSFET
FEATURES
* R
DS(ON)
= 5Ω@V
GS
= 10V
* Ultra Low gate charge (typical 9.0nC)
* Low reverse transfer capacitance (C
RSS
= typical 5.0 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
*Pb-free plating product number: 2N60LL
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Package
Normal
Lead Free Plating
2N60L-x-TA3-T
2N60LL-x-TA3-T
TO-220
2N60L-x-TF3-T
2N60LL-x-TF3-T
TO-220F
2N60L-x-TM3-T
2N60LL-x-TM3-T
TO-251
2N60L-x-TN3-R
2N60LL-x-TN3-R
TO-252
2N60L-x-TN3-T
2N60LL-x-TN3-T
TO-252
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
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Copyright © 2008 Unisonic Technologies Co., Ltd
1 of 8
QW-R502-182,A
2N60L
ABSOLUTE MAXIMUM RATINGS
(
T
C
= 25℃, unless otherwise specified)
PARAMETER
SYMBOL
Power MOSFET
RATINGS
UNIT
2N60L-A
600
V
Drain-Source Voltage
V
DSS
2N60L-B
650
V
Gate-Source Voltage
V
GSS
±30
V
Avalanche Current (Note 1)
I
AR
2.0
A
T
C
= 25°C
2.0
A
Drain Current Continuous
I
D
T
C
= 100°C
1.26
A
Drain Current Pulsed (Note 1)
I
DP
8.0
A
Single Pulsed (Note 2)
E
AS
140
mJ
Avalanche Energy
4.5
mJ
Repetitive (Note 1)
E
AR
Peak Diode Recovery dv/dt (Note 3)
dv/dt
4.5
V/ns
TO-220
32
W
TO-220F
9
W
Total Power Dissipation
P
D
TO-251
25
W
TO-252
20
W
Junction Temperature
T
J
+150
℃
Operating Temperature
T
OPR
-55 ~ +150
℃
Storage Temperature
T
STG
-55 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Thermal Resistance Junction-Ambient
PACKAGE
TO-251
TO-252
TO-220
TO-220F
TO-251
TO-252
TO-220
TO-220F
SYMBOL
θ
JA
RATINGS
65
58
43
38
5
6
4
12
UNIT
℃/W
Thermal Resistance Junction-Case
θ
Jc
ELECTRICAL CHARACTERISTICS
(T
J
=25℃, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
2N60L-A
2N60L-B
SYMBOL
BV
DSS
I
DSS
TEST CONDITIONS
V
GS
= 0V, I
D
= 250µA
MIN
600
650
10
100
-100
0.4
2.0
3.8
270
40
5
4.0
5
350
50
7
TYP MAX UNIT
V
V
µA
nA
nA
V/℃
V
Ω
pF
pF
pF
Breakdown Voltage Temperature
Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
= 600V, V
GS
= 0V
Forward
V
GS
= 30V, V
DS
= 0V
I
GSS
Reverse
V
GS
= -30V, V
DS
= 0V
I
D
= 250 µA, Referenced to
△BV
DSS
/
△
T
J
25°C
V
GS(TH)
R
DS(ON)
C
ISS
C
OSS
C
RSS
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
=1A
V
DS
=25V, V
GS
=0V, f =1MHz
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QW-R502-182,A
2N60L
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D (ON)
Turn-On Rise Time
t
R
V
DD
=300V, I
D
=2.4A, R
G
=25Ω
(Note 4, 5)
Turn-Off Delay Time
t
D(OFF)
Turn-Off Fall Time
t
F
Total Gate Charge
Q
G
V
DS
=480V, V
GS
=10V, I
D
=2.4A
Gate-Source Charge
Q
GS
(Note
4,
5)
Gate-Drain Charge
Q
GD
DRAIN-SOURCE DIODE CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0 V, I
SD
= 2.0 A
Continuous Drain-Source Current
I
SD
Pulsed Drain-Source Current
I
SM
Reverse Recovery Time
t
RR
V
GS
= 0 V, I
SD
= 2.4A,
di/dt = 100 A/µs (Note4)
Reverse Recovery Charge
Q
RR
Note: 1. Repetitive Rating : Pulse width limited by T
J
2. L=64mH, I
AS
=2.0A, V
DD
=50V, R
G
=25
Ω,
Starting T
J
= 25°C
3. I
SD
≤
2.4A, di/dt
≤200A/µs,
V
DD
≤
BV
DSS
, Starting T
J
= 25°C
4. Pulse Test: Pulse width
≤
300µs, Duty cycle
≤
2%
5. Essentially independent of operating temperature
Power MOSFET
MIN
TYP MAX UNIT
10
25
20
25
9.0
1.6
4.3
30
60
50
60
11
ns
ns
ns
ns
nC
nC
nC
V
A
A
ns
µC
1.4
2.0
8.0
180
0.72
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QW-R502-182,A
2N60L
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
D.U.T.
+
V
DS
-
+
-
L
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
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4 of 8
QW-R502-182,A
2N60L
TEST CIRCUITS AND WAVEFORMS (Cont.)
Power MOSFET
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
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QW-R502-182,A
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