Product Specification
www.jmnic.com
Silicon PNP Power Transistors
2N6226 2N6227 2N6228
DESCRIPTION
・With
TO-3 package
・Low
collector saturation voltage
・Excellent
safe operating area
APPLICATIONS
・For
high power audio;stepping motor
and other linear applications
PINNING
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
℃)
SYMBOL
PARAMETER
2N6226
V
CBO
Collector-base voltage
2N6227
2N6228
2N6226
V
CEO
Collector-emitter voltage
2N6227
2N6228
V
EBO
I
C
P
D
T
j
T
stg
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
Open emitter
CONDITIONS
VALUE
100
120
140
100
120
140
7
6
150
150
-65~200
V
A
W
℃
℃
V
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
0.92
UNIT
℃/W
JMnic
Product Specification
www.jmnic.com
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
2N6226
V
CEO
Collector-emitter
sustaining voltage
2N6227
2N6228
V
CEsat
V
BE
I
CEO
I
CBO
I
EBO
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
2N6226
h
FE
DC current gain
2N6227
2N6228
f
T
Transition frequency
I
C
=0.5A ; V
CE
=4V
I
C
=3A ; V
CE
=2V
I
C
=4A; I
B
=0.4A
I
C
=3A ; V
CE
=2V
V
CE
=Rated V
CEO
; I
B
=0
V
CB
=Rated V
CBO
; I
E
=0
V
EB
=7V; I
C
=0
I
C
=0.2A ;I
B
=0
2N6226 2N6227 2N6228
CONDITIONS
MIN
100
120
140
TYP.
MAX
UNIT
V
1.2
1.8
5.0
1.0
0.1
25
20
15
1
100
80
60
V
V
mA
mA
mA
MHz
JMnic
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