UNISONIC TECHNOLOGIES CO., LTD
2N65L
Preliminary
Power MOSFET
2A, 650V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
2N65L
is a high voltage power MOSFET and is
designed to have better characteristics, such as fast switching time,
low gate charge, low on-state resistance and a high rugged
avalanche characteristics. This power MOSFET is usually used in
the high speed switching applications of power supplies, PWM motor
controls, high efficient DC to DC converters and bridge circuits.
1
TO-220
1
TO-220F
1
FEATURES
* R
DS(ON)
= 5.0Ω@V
GS
= 10V
* Ultra Low gate charge (typical 9.0nC)
* Low reverse transfer capacitance (C
RSS
= typical 5.0 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
1
TO-220F1
TO-251L
SYMBOL
1
TO-251
1
TO-252
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
2N65LL-TA3-T
2N65LG-TA3-T
2N65LL-TF1-T
2N65LG-TF1-T
2N65LL-TF3-T
2N65LG-TF3-T
2N65LL-TM3-T
2N65LG-TM3-T
2N65LL-TMA-T
2N65LG-TMA-T
2N65LL-TN3-R
2N65LG-TN3-R
2N65LL-TN3-T
2N65LG-TN3-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-220F1
TO-220F
TO-251
TO-251L
TO-252
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
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1 of 6
QW-R502-580.c
2N65L
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(
T
C
= 25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
650
V
Gate-Source Voltage
V
GSS
±30
V
Avalanche Current (Note 2)
I
AR
2.0
A
2.0
A
Continuous
I
D
Drain Current
Pulsed (Note 2)
I
DM
8.0
A
140
mJ
Single Pulsed (Note 3)
E
AS
Avalanche Energy
Repetitive (Note 2)
E
AR
4.5
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220
54
W
Power Dissipation TO-220F/TO-220F1
P
D
23
W
TO-251/TO-251L/TO-252
44
W
Junction Temperature
T
J
+150
°С
Operating Temperature
T
OPR
-55 ~ +150
°С
Storage Temperature
T
STG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by T
J
3. L=64mH, I
AS
=2.0A, V
DD
=50V, R
G
=25
Ω,
Starting T
J
= 25°C
4. I
SD
≤2.4A,
di/dt≤200A/μs, V
DD
≤
BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
PARAMETER
TO-220/TO-220F/TO-220F1
Junction to Ambient
TO-251/TO-251L/TO-252
TO-220
Junction to Case
TO-220F/TO-220F1
TO-251/TO-251L/TO-252
SYMBOL
θ
JA
θ
Jc
RATINGS
62.5
100
2.32
5.5
2.87
UNIT
°С/W
°С/W
°С/W
°С/W
°С/W
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QW-R502-580.c
2N65L
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS
(T
J
=25°С, unless otherwise specified)
SYMBOL
BV
DSS
I
DSS
TEST CONDITIONS
MIN TYP MAX UNIT
650
V
10
μA
100 nA
-100 nA
V/°С
4.0
5.0
350
50
7
30
60
50
60
11
V
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
A
A
ns
μC
V
GS
= 0V, I
D
= 250μA
V
DS
= 650V, V
GS
= 0V
Forward
V
GS
= 30V, V
DS
= 0V
Gate-Source Leakage Current
I
GSS
Reverse
V
GS
= -30V, V
DS
= 0V
Breakdown Voltage Temperature Coefficient
△BV
DSS
/
△
T
J
I
D
=250μA,Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
= 10V, I
D
=1A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
V
DS
=25V, V
GS
=0V,
Output Capacitance
C
OSS
f =1MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D (ON)
Turn-On Rise Time
t
R
V
DD
=325V, I
D
=2.4A,
R
G
=25Ω (Note 1, 2)
Turn-Off Delay Time
t
D(OFF)
Turn-Off Fall Time
t
F
Total Gate Charge
Q
G
V
DS
=520V, V
GS
=10V,
Gate-Source Charge
Q
GS
I
D
=2.4A (Note 1, 2)
Gate-Drain Charge
Q
GD
DRAIN-SOURCE DIODE CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0 V, I
SD
= 2.0 A
Continuous Drain-Source Current
I
SD
Pulsed Drain-Source Current
I
SM
Reverse Recovery Time
t
rr
V
GS
= 0 V, I
SD
= 2.4A,
di/dt = 100 A/μs (Note1)
Reverse Recovery Charge
Q
RR
Notes: 1. Pulse Test: Pulse width
≤
300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
0.4
2.0
3.9
270
40
5
10
25
20
25
9.0
1.6
4.3
1.4
2.0
8.0
180
0.72
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-580.c
2N65L
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
V
DS
-
+
-
L
D.U.T.
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
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4 of 6
QW-R502-580.c
2N65L
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
V
DS
90%
V
GS
10%
t
D(ON)
t
R
t
D(OFF)
t
F
Switching Test Circuit
Switching Waveforms
V
GS
Q
G
10V
Q
GS
Q
GD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BV
DSS
I
AS
I
D(t)
V
DD
V
DS(t)
t
p
Time
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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www.unisonic.com.tw
5 of 6
QW-R502-580.c
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