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2N6667

Description
PNP DARLINGTON TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size136KB,1 Pages
ManufacturerNew Jersey Semiconductor
Websitehttp://www.njsemi.com
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PNP DARLINGTON TRANSISTOR

2N6667 Parametric

Parameter NameAttribute value
MakerNew Jersey Semiconductor
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknown
Shell connectionCOLLECTOR
Maximum collector current (IC)10 A
Collector-based maximum capacity200 pF
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)1000
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typePNP
Maximum power consumption environment2 W
Maximum power dissipation(Abs)2 W
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)20 MHz
VCEsat-Max2 V
Base Number Matches1

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