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2N6671

Description
Silicon NPN Power Transistors
File Size37KB,3 Pages
ManufacturerJinmei
Websitehttp://www.jmnic.com/
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2N6671 Overview

Silicon NPN Power Transistors

JMnic
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-3 package
・Low
saturation voltage
・Fast
switching speed
・High
voltage ratings
APPLICATIONS
・Off-line
power supplies
・High-voltage
inverters
・Switching
regulators
PINNING
PIN
1
2
3
Base
Emitter
DESCRIPTION
2N6671 2N6672 2N6673
Fig.1 simplified outline (TO-3) and symbol
Collector
Absolute maximum ratings(Ta=
℃)
SYMBOL
PARAMETER
2N6671
V
CBO
Collector-base voltage
2N6672
2N6673
2N6671
V
CEO
Collector-emitter voltage
2N6672
2N6673
V
EBO
I
C
I
CM
I
B
P
D
T
j
T
stg
Emitter-base voltage
Collector current
Collector current-peak
Base current
Total Power Dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
Open emitter
CONDITIONS
VALUE
450
550
650
300
350
400
8
8
10
4
150
200
-65~200
V
A
A
A
W
V
V
UNIT

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