20 STERN AVE.
SPRINQRELD, NEW JERSEY 07081
U.SA
TELEPHONE: (973) 376-2922
(212)227-6006
FAX- (973) 376-8960
2N6769/2N6770
N-Channel Power MOSFETs,
12 A, 450 V/500 V
Description
These devices are n-ohannel, enhancement mode, power
MQSFETs designed especially for high voltage, high speed
applications, such as off-line switching power supplies,
UPS, AC and DC motor controls, relay and solenoid
drivers.
• VGS Rated at ±20 V
• Silicon Gate for Fast Switching Speeds
TO-204AA
• IDSSI
v
os(on), SOA and V
a3(Ul)
Specified at Elevated
Temperature
• Rugged
Maximum Ratings
Symbol
VDSS
VDGR
Characteristic
Rating
2N6770
500
500
±20
2N6769
2N6770
Rating
2N6769
450
450
±20
Unit
Drain to Source Voltage
Drain to Gate Voltage
Ros-1.0 Mil
Gate to Source Voltage
Operating Junction and
Storage Temperatures
Maximum Lead Temperature
for Soldering Purposes,
1/16" From Case for 10 s
V
V
V
VQS
Tj, T,
|B
-55 to
+150
300
-55 to
+1SO
300
«c
°c
T
L
Maximum On-State Characteristics
R
DS(on)
Static Drain-to-Source
On Resistance
Drain Current
Continuous at T
c
- 25°C
Continuous at T
c
=» 100'C
Pulsed
0.4
0.5
ft
A
ID
IDM
R0JC
12
4.75
25
2
11
7.0
20
2
Maximum Thermal Characteristics
Thermal Resistance,
Junction to Case
Total Power Dissipation
at TO - 25°C
at T
C
-100*C
Linear Derating Factor
0.83
0.83
°C/W
PD
W
150
60
1.2
150
60
1.2
W/"C
N'J Semi-Conductors reserves the right to change test conditions, parameter limits nnd package dimensions without notice.
Information furnished by N.I Semi-ConJuctors is believed to be both accurate and reliable at the time of going to press. Hoviever NJ
Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. N.I Semi-Conductors encourages
customers to verifv that datasheets are current before placing orders.
2N6769/2N6770
Electrical Characteristics
(T
c
= 25°C unless otherwise noted)
Symbol
Off Characteristics
V(BR)DSS
Characteristic
Mln
Max
Unit
1
Test Conditions
Drain Source Breakdown Voltage
1
2N6770
2M6769
500
2
450
2
V
V
GS
- o V, b - 4 mA
loss
Zero Gate Voltage Drain Current
1
4
ItlA
V
D
s = Rated V
DSS
. V
es
- 0 V
V
0
s " Rated V
DSS
.
VQS-O V, T
C
=125'C
IGSS
Gate-Body Leakage Current
±100
2.0
4.0
nA
V
i
l
VGS -±20 V, Vos-0 V
On Characteristics
VGS(I!>)
RDS(on)
Gate Threshold Voltage
Static Drain-Source On-Resistance'
2N6770
2N6769
2N6770
2N6769
Vos(on)
Drain-Source On-Voltage'
2N6770
2N6769
0.4
0.5
I
D
-1 mA, VOS-VQS
V
QS
- 1 0 V
ID =
7.75
A
ID - 7.0 A
ID -7.75 A, Tc-126'C
ID -7.0 A, T
C
=125°C
0.88
1.10
V
V
QS
-10 V
I
D
-12 A
I
D
= 11 A
6.0
6,0
8.0
24
9fs
Forward Transconductance
s (u>
PF
PF
PF
V
DS
-15 V, ID -7.75 A
Dynamic Characteristics
Cjse
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
1000
200
50
3000
V
DS
-25 V. V
QS
= 0 V
Cdss
C,
8S
eoo
200
f-1.0 MHz
Switching Characteristics (Tc - 25°C. Figures
9, 10)
ld(tm)
tr
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
35
60
150
70
ns
ns
ns
ns
nC
Vrjo = 210 V, I
0
= 7.75 A
VQS -10V, R0EN-4.7 n
R
QS
= 4.7 J2
*d(offl
tf
Q
8
120*
V
QS
=10 V, I
D
=16 A
VDD - 400 V
Electrical Characteristics
(Cont.) (T
c
= 25°C unless otherwise noted)
Symbol
Characteristic
Win
Typ
Max
Unit
Test Conditions
Source-Drain Dlade Characteristics
is
Continuous Source Current
2N6770
2N6769
Pulsed Source Current
2N6770
2N6769
Diode Forward Voltage
2N6770
2N6769
Reverse Recovery Time
0.80
0.75
A
12
2
A
25
J
20
2
V
1.6
1,5
1300
s
7.4
s
(
SM
VSD
VGS-O V
Is -12 A
Is -11 A
ns
nC
VQS-O V, Tj-150°C
IF -ISM, d!
F
/dt--100 A//JS
VQS-O V, Tj = 150'C
IF = ISM. dlp/dt- 100 A/JUS
•"
QHR
Reverse Recovery Charge
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