2N7000
2N7000
N
Version 2011-02-16
Power dissipation
Verlustleistung
S GD
N-Channel Enhancement Mode Field Effect Transistor
N-Kanal Feldeffekt Transistor – Anreicherungstyp
N
350 mW
TO-92
(10D3)
0.18 g
16
Plastic case
Kunststoffgehäuse
Weight approx.
Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
9
18
2 x 2.54
Dimensions - Maße [mm]
Maximum ratings (T
A
= 25°C)
Drain-Source-voltage – Drain-Source-Spannung
Drain-Gate-voltage – Drain-Gate-Spannung
Gate-Source-voltage – Gate-Source-Spannung
Power dissipation – Verlustleistung
Drain current continuos – Drainstrom (dc)
Peak Drain current – Drain-Spitzenstrom
Operating Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
R
GS
≤ 1 MΩ
dc
t
p
< 50 µs
V
DSS
V
DGR
V
GSS
V
GSS
P
tot
I
D
I
DM
T
j
T
S
Grenzwerte (T
A
= 25°C)
2N7000
60 V
60 V
± 20 V
± 40 V
350 mW
200 mA
500 mA
150°C
-55…+150°C
© Diotec Semiconductor AG
http://www.diotec.com/
1
2N7000
Characteristics (T
j
= 25°C)
Drain-Source breakdown voltage – Drain-Source Durchbruchspannung
I
D
= 10 µA
Drain-Source leakage current – Drain-Source Leckstrom
V
DS
= 48 V
V
DS
= 48 V, T
j
= 125°C
Gate-Body leakage current – Gate-Substrat Leckstrom
V
GS
= ±15 V
Gate-Threshold voltage – Gate-Source Schwellspannung
V
GS
= V
DS
, I
D
= 1 mA
Drain-Source on-voltage – Drain-Source-Spannung
V
GS
= 10 V, I
D
= 500 mA
V
GS
= 4.5 V, I
D
= 75 mA
V
GS
= 10 V, I
D
= 500 mA
V
GS
= 4.5 V, I
D
= 75 mA
Forward Transconductance – Übertragungssteilheit
V
DS
= 10 V, I
D
= 200 mA
Input Capacitance – Eingangskapazität
V
DS
= 25 V, f = 1 MHz
Output Capacitance – Ausgangskapazität
V
DS
= 25 V, f = 1 MHz
Reverse Transfer Capacitance – Rückwirkungskapazität
V
DS
= 25 V, f = 1 MHz
Turn-On Delay Time – Einschaltverzögerung
V
DD
= 15 V, R
L
= 30 Ω, I
D
= 0.5 A, V
GS
= 10 V, R
G
= 25 Ω
Turn-Off Delay Time – Ausschaltverzögerung
V
DD
= 15 V, R
L
= 30 Ω, I
D
= 0.5 A, V
GS
= 10 V, R
G
= 25 Ω
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
t
off
R
thA
10 ns
< 357 K/W
1
)
t
on
10 ns
C
rss
5 pF
C
oss
25 pF
C
iss
60 pF
V
DS(on)
2.5 V
0.45 V
5Ω
6Ω
100 mS
V
GS(th)
0.8 V
3V
±I
GSS
10 nA
V
(BR)DSS
G short
I
DSS
I
DSS
1 µA
1 mA
60 V
Kennwerte (T
j
= 25°C)
Min.
Typ.
Max.
Drain-Source on-state resistance – Drain-Source Einschaltwiderstand
R
DS(on)
R
DS(on)
g
FS
1
Device mounted on standard PCB material
Bauteil montiert auf Standard-Leiterplattenmaterial
http://www.diotec.com/
© Diotec Semiconductor AG
2
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