2SA1 201
TRANSISTOR(PNP)
FEATURES
High voltage
High transition frequency
Complementary to 2SC2881
MAXIMUM RATINGS (T
A
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
SOT-89
1.
BASE
2.
COLLECTOR
3.
EMITTER
1
2
3
Value
-120
-120
-5
-0.8
0.5
150
-55-150
Units
V
V
V
A
W
℃
℃
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS (Tamb=25
℃
unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE
f
T
C
ob
Test
conditions
MIN
-120
-120
-5
-0.1
-0.1
80
240
-1
-1
120
30
V
V
MHz
pF
TYP
MAX
UNIT
V
V
V
μA
μA
I
C
=-1mA,I
E
=0
I
C
=-10mA,I
B
=0
I
E
=-1mA,I
C
=0
V
CB
=-120V,I
E
=0
V
EB
=-5V,I
C
=0
V
CE
=-5V,I
C
=-100mA
I
C
=-500mA,I
B
=-50mA
V
CE
=-5V,I
C
=-500mA
V
CE
=-5V,I
C
=-100mA
V
CB
=-10V,I
E
=0,f=1MHz
CLASSIFICATION OF
Rank
Range
Marking
１
JinYu
h
FE
O
80-160
DO
Y
120-240
DY
semiconductor
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