LAPT
2SA1215
Application :
Audio and General Purpose
(Ta=25°C)
Ratings
–100
max
–100
max
–160
min
50
min
∗
–2.0
max
50
typ
400
typ
V
MHz
pF
20.0min
4.0max
2
3
1.05
+0.2
-0.1
5.45
±0.1
5.45
±0.1
B
C
E
0.65
+0.2
-0.1
3.0
+0.3
-0.1
Silicon PNP Epitaxial Planar Transistor
(Complement to type 2SC2921)
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
Ratings
–160
–160
–5
–15
–4
150(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
f
T
C
OB
Conditions
V
CB
=–160V
V
EB
=–5V
I
C
=–25mA
V
CE
=–4V, I
C
=–5A
I
C
=–5A, I
B
=–0.5A
V
CE
=–12V, I
E
=2A
V
CB
=–10V, f=1MHz
External Dimensions
MT-200
36.4
±0.3
24.4
±0.2
2-ø3.2
±0.1
9
7
21.4
±0.3
2.1
6.0
±0.2
Unit
µ
A
µ
A
V
a
b
∗h
FE
Rank O(50 to 100), P(70 to 140), Y(90 to 180)
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
–60
R
L
(Ω)
12
I
C
(A)
–5
V
B2
(V)
5
I
B1
(mA)
–500
I
B2
(mA)
500
t
on
(
µ
s)
0.25typ
t
stg
(
µ
s)
0.85typ
t
f
(
µ
s)
0.2typ
Weight : Approx 18.4g
a. Part No.
b. Lot No.
I
C
– V
C E
Characteristics
(Typical)
A
–6
mA
mA
mA
A
00
500
400
0m
–
–
–30
V
CE
(sat ) – I
B
Characteristics
(Typical)
C o l l ec t or - Em i t t e r Sa t u r at i on Vo lt a ge V
C E( s at)
(V )
–3
I
C
– V
B E
Temperature Characteristics
(Typical)
– 15
( V
CE
= – 4 V )
–16
5
–7
0m
–12
C ol l e c t o r C ur r e nt I
C
( A)
–150mA
–1 00 mA
C o l l e c t o r C u r r en t I
C
( A)
–200
mA
–2
– 10
–8
p)
)
emp
eT
˚C (
–4
(Ca
0
0
–1
–2
–3
–4
0
0
– 0. 2
– 0. 4
– 0 .6
– 0. 8
–1 .0
0
0
–1
B as e - Em i t t o r Vo l t a g e V
B E
( V )
–30
I
B
=–20mA
– 5A
125
25˚C
˚C (
Cas
I
C
= – 10 A
Cas
–50mA
–1
–5
se T
e Te
mp)
em
–2
C ol l e ct or - Em it t er Vo l t ag e V
C E
(V )
Bas e C ur r e nt I
B
( A)
h
FE
– I
C
Characteristics
(Typical)
(V
C E
=– 4 V )
200
D C C u r r e n t G ai n h
F E
h
F E
– I
C
Temperature Characteristics
(Typical)
( V
C E
= –4 V)
200
1 25 ˚ C
D C C u r r e n t G ai n h
F E
Transient Thermal Resistance
θ
j-a
( ˚ C / W )
2
θ
j - a
– t Characteristics
1
100
Typ
100
2 5˚ C
– 3 0˚ C
0 .5
50
50
10
–0.02
–0 . 1
–0.5
–1
–5 – 1 0 – 1 5
30
– 0 .0 2
– 0. 1
– 0. 5
–1
–5
–1 0 – 15
0 .1
1
10
100
Time t(ms)
10 0 0 20 0 0
C ol l ec t or Cur ren t I
C
( A)
C o ll e ct o r C u r r e nt I
C
( A)
f
T
– I
E
Characteristics
(Typical)
( V
C E
=– 1 2 V )
80
–40
Safe Operating Area
(Single Pulse)
16 0
Pc – Ta Derating
60
C olle c to r C u r r e n t I
C
( A )
Ty
p
Ma x imu m P ow e r D i s s i p a t i o n P
C
( W )
10
Cut- off F r e q u e n c y f
T
( M H
Z
)
m
s
–10
D
C
12 0
W
ith
In
–5
fin
ite
40
80
he
at
si
nk
–1
–0.5
Without Heatsink
Natural Cooling
20
40
W i t h o u t H e a ts i n k
0
0.02
0.1
1
10
–0.2
–2
– 10
–1 0 0
– 20 0
5
0
0
25
50
75
100
1 25
1 50
Em i t t er C urr en t I
E
(A )
Col l ec t or - Em i t te r Vol t ag e V
C E
( V)
Am b i e n t T e m pe r a t u r e T a( ˚ C)
12
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