UNISONIC TECHNOLOGIES CO., LTD
2SA1627A
PNP EPITAXIAL SILICON
TRANSISTOR
DESCRIPTION
PNP SILICON TRANSISTOR
The UTC
2SA1627A
is designed for general purpose
amplifier and high speed switching applications.
FEATURES
* High voltage
* Low collector saturation voltage.
* High-speed switching
ORDERING INFORMATION
Package
SOT-223
TO-251
TO-252
TO-126
TO-126C
Pin Assignment
1
2
3
B
C
E
B
C
E
B
C
E
E
C
B
E
C
B
Packing
Tape Reel
Tube
Tape Reel
Bulk
Bulk
Ordering Number
Lead Free
Halogen Free
-
2SA1627AG-x-AA3-R
2SA1627AL-x-TM3-T
2SA1627AG-x-TM3-T
2SA1627AL-x-TN3-R
2SA1627AG-x-TN3-R
2SA1627AL-x-T60-K
2SA1627AG-x-T60-K
2SA1627AL-x-T6C-K
2SA1627AG-x-T6C-K
Note: Pin Assignment: E: Emitter C: Collector
B: Base
MARKING
SOT-223
TO-251 / TO-252
TO-126 / TO-126C
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2SA1627A
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
SYMBOL
V
CBO
V
CEO
V
EBO
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C, unless otherwise specified)
RATINGS
UNIT
-600
V
-600
V
-7.0
V
SOT-223
0.8
Collector Power Dissipation
TO-251/TO-252
P
C
1.9
W
TO-126/TO-126C
1.0
Collector Current (DC)
I
C
-1.0
A
Collector Current (Pulse) (Note 2)
I
CP
-2.0
A
Junction Temperature
T
J
150
C
Storage Temperature
T
STG
-55 ~ +150
C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. P
W
≦10ms,
Duty Cycle≦50%
ELECTRICAL CHARACTERISTICS
(T
A
=25C, unless otherwise specified)
SYMBOL
I
CBO
I
EBO
h
FE1
h
FE2
V
CE(SAT)
V
BE(SAT)
f
T
C
OB
t
ON
T
SYG
t
F
TEST CONDITIONS
V
CB
= -600V, I
E
=0
V
EB
= -7.0V, I
C
=0
V
CE
= -5.0V, I
C
= -0.1A
V
CE
= -5.0V, I
C
= -0.5A
I
C
= -0.3A, I
B
= -0.06A
I
C
= -0.3A, I
B
= -0.06A
V
CE
= -10V, I
E
=0.1A
V
CB
= -10V, I
E
=0, f=1.0MHz
I
C
=-0.5A, R
L
=500Ω,
I
B1
= -I
B2
= -0.1A, V
CC
=-250V
MIN
TYP MAX UNIT
-10
µA
-10
µA
58
120
19
-0.28 -1.5
V
-0.85 -1.2
V
28
MHz
42
50
pF
0.1
0.5
µs
3.5
5.0
µs
0.08 0.5
µs
PARAMETER
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain (Note 2)
Collector-Emitter Saturation Voltage(Note)
Base-Emitter Saturation Voltage(Note)
Gain Bandwidth Product
Output Capacitance
Turn-On Time
Storage Time
Fall Time
Note: Pulsed PW≦350µs, Duty Cycle≦2%
30
4
10
CLASSIFICATION OF h
FE1
RANK
RANGE
M
30-60
L
40-80
K
60-120
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2SA1627A
PNP SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Collector Current vs.
Collector to Emitter Voltage
2.0
mA
DC Current Gain vs. Collector Current
1000
300
DC Current Gain, h
FE
100
30
10
3
1
-0.002 -0.005 -0.02
-0.1 -0.2 -0.5 -1.0 -2.0
-0.01
-0.05
Collector Current, I
C
(A)
Collector and Base Saturation Voltage
vs. Collector Current
I
C
=5I
B
V
BE(SAT)
V
CE
=-5.0V
-100
Collector Current, I
C
(mA)
-80
-60
-40
-20
0
0
I
B
=1.8mA
I
B
=1.6mA
I
B
=1.4mA
I
B
=1.2mA
I
B
=1.0mA
I
B
=0.8mA
I
B
=0.6mA
I
B
=0.4mA
I
B
=0.2mA
I
B
=
-2.0
-6.0
-10
-4.0
-8.0
Collector to Emitter Voltage, V
CE
(V)
Collector Current vs.
Base to Emitter Voltage
V
CE
=-5.0V
-1.0
-0.3
-0.1
-3.0
-1.0
-0.3
-0.03
-0.01
-0.003
-0.1
V
CE(SAT)
0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6
Base to Emitter Voltage, V
BE
(V)
Output Capacitance vs.
Collector to Base Voltage
-0.03
-0.005 -0.01 -0.02 -0.05 -0.1 -0.2
Collector Current, I
C
(A)
-0.5
Collector Power Dissipation
vs. Ambient Temperature
1.2
1.0
0.8
0.6
0.4
0.2
0
Free Air
200
100
50
20
10
5.0
2.0
-3.0
I
E
=0
-10
-30
-100
-300
Collector to Base Voltage, V
CB
(V)
0
25
75
100 125 150
50
Ambient Temperature, T
A
( )
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2SA1627A
PNP SILICON TRANSISTOR
TYPICAL CHARACTERISTICS(Cont.)
Turn Off Time vs. Collector Current
Gain Bandwidth Product, f
T
(MHz)
5.0
Switching Time, t
SW
(µs)
t
STG
2.0
1.0
0.5
0.2
0.1
-0.03
t
F
-0.1
-0.3
-1.0
Collector Current, I
C
(A)
-3.0
I
C
/I
B
=5
V
CE
=-250V
I
B1
=I
B2
100
50
20
10
5.0
2.0
1.0
-0.002
Gain Bandwidth Product vs.
Collector Current
V
CB
=-5.0V
-0.005 -0.01 -0.02 -0.05 -0.1 -0.2
Collector Current, I
C
(mA)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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www.unisonic.com.tw
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