2SA1640
Pb
®
Pb Free Plating Product
2SA1640
40 Watt Silicon PNP Switching Power Transistor
DESCRIPTION
·With
TO-220F package
·Low
collector saturation voltage
·Good
linearity of h
FE
APPLICATIONS
·For
switching regulator ,driver and
power amplifier applications
PINNING
PIN
1
2
3
Base
Collector
Fig.1 simplified outline (TO-220F) and symbol
Emitter
DESCRIPTION
1
2
3
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
B
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open emitter
Open base
Open collector
CONDITIONS
VALUE
-30
-30
-5
-7
-1
40
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
P
C
T
j
T
stg
Page 1/2
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
2SA1640
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
®
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=-10mA ; I
B
=0
B
-30
V
V
(BR)CBO
Collector-base breakdown voltage
I
C
=-1mA ; I
E
=0
-30
V
V
(BR)EBO
Emitter-base breakdown voltage
I
E
=-1mA ; I
C
=0
-5
V
V
CEsat
Collector-emitter saturation voltage
I
C
=-3A ;I
B
=-0.1A
B
-0.4
V
V
BEsat
Base-emitter saturation voltage
I
C
=-3A ;I
B
=-0.1A
B
-1.0
V
I
CBO
Collector cut-off current
V
CB
=-30V; I
E
=0
-10
μA
I
EBO
Emitter cut-off current
V
EB
=-5V; I
C
=0
-10
μA
h
FE
DC current gain
I
C
=-0.2A ; V
CE
=-2V
100
300
f
T
Transition frequency
I
C
=-0.5A ; V
CE
=-10V
20
MHz
PACKAGE OUTLINE
TO-220F
Dimensions In Millimeters
Page 2/2
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/