2SA1908
Silicon PNP Epitaxial Planar Transistor
(Complement to type 2SC5100)
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
Ratings
–120
–120
–6
–8
–3
75(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Application :
Audio and General Purpose
(Ta=25°C)
Ratings
–10
max
–10
max
–120
min
50
min
∗
–0.5
max
20
typ
300
typ
V
MHz
16.2
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
f
T
C
OB
Conditions
V
CB
=–120V
V
EB
=–6V
I
C
=–50mA
V
CE
=–4V, I
C
=–3A
I
C
=–3A, I
B
=–0.3A
V
CE
=–12V, I
E
=0.5A
V
CB
=–10V, f=1MHz
External Dimensions
FM100(TO3PF)
0.8
±0.2
15.6
±0.2
5.5
±0.2
3.45
±0.2
5.5
ø3.3
±0.2
1.6
Unit
µ
A
23.0
±0.3
V
9.5
±0.2
µ
A
a
b
pF
1.75
2.15
1.05
+0.2
-0.1
5.45
±0.1
1.5
4.4
5.45
±0.1
1.5
0.65
+0.2
-0.1
3.3
0.8
∗h
FE
Rank O(50 to 100), P(70 to 140), Y(90 to 180)
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
–40
R
L
(Ω)
10
I
C
(A)
–4
V
BB1
(V)
–10
V
BB2
(V)
5
I
B1
(A)
–0.4
I
B2
(A)
0.4
t
on
(
µ
s)
0.14typ
t
stg
(
µ
s)
1.40typ
t
f
(
µ
s)
0.21typ
3.35
B
C
E
Weight : Approx 6.5g
a. Part No.
b. Lot No.
I
C
– V
C E
Characteristics
(Typical)
–8
–2
00
50
V
CE
(sat ) – I
B
Characteristics
(Typical)
–3
C o l l e c t o r - Em i t t e r Sa t u r a ti o n Vo l ta ge V
C E (s at)
(V )
I
C
– V
B E
Temperature Characteristics
(Typical)
–8
( V
CE
=– 4 V )
m
m
A
–1
50
mA
–100
mA
–3
A
C o l l e c t o r Cu r r e n t I
C
( A)
–6
–75mA
Co l l e c t o r Cu r r ent I
C
( A)
–6
–2
–50mA
–4
–4
p)
Tem
mp)
Cas
e
–1
I
C
= – 8A
– 4A
– 2A
0
0
–0.2
– 0. 4
–0 . 6
– 0. 8
–1 . 0
(Cas
e Te
˚C (
25˚C
125
I
B
=–10mA
0
0
–1
–2
–3
–4
0
0
–0.5
–30˚
C (C
–2
–2
ase
– 1. 0
Tem
–25mA
p)
C ol l e ct or - Em it t e r V ol ta ge V
C E
(V )
Ba se Cu r r e nt I
B
( A )
B as e - Em i t t o r Vo l t a g e V
B E
( V )
(V
C E
=– 4 V )
200
D C C u r r e n t G ai n h
F E
D C C u r r e n t G ai n h
F E
300
( V
C E
= – 4V )
Transient Thermal Resistance
θ
j-a
( ˚ C / W )
h
F E
– I
C
Characteristics
(Typical)
h
F E
– I
C
Temperature Characteristics
(Typical)
θ
j - a
– t Characteristics
4
Typ
100
12 5˚ C
25 ˚ C
– 30 ˚ C
100
1
50
50
0.5
30
–0.02
– 0. 1
–0 .5
–1
–5 –8
30
–0.02
0.2
– 0. 1
– 0. 5
–1
–5
–8
C o ll e ct o r Cu r r e nt I
C
( A)
1
10
10 0
Time t(ms)
10 0 0 20 0 0
C o ll e ct o r C urr en t I
C
(A)
f
T
– I
E
Characteristics
(Typical)
(V
C E
=– 1 2 V )
30
–20
–10
Safe Operating Area
(Single Pulse)
80
10
Pc – Ta Derating
10
Cu t- off F r e q u e n c y f
T
( M H
Z
)
Typ
C olle c to r C u r r e n t I
C
( A )
20
0m
s
–5
DC
s
Ma x imu m P ow e r D i s s i p a t i o n P
C
( W )
m
60
40
–1
–0.5
Without Heatsink
Natural Cooling
10
20
0
0.02
0.0 5 0 . 1
0 .5
1
5
8
–0.1
–5
–1 0
–50
–1 00 – 15 0
3.5
0
Without Heatsink
0
25
50
75
100
125
1 50
Em i t t er C urre nt I
E
(A )
Col l ec t or - Em i tt e r Vol t ag e V
C E
( V)
Am bi e nt T e m pe r a t u r e T a ( ˚ C )
36
3.0
–1 . 5
W
ith
In
fin
ite
he
at
si
nk
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