J.£.i±£.u <z3s.ml-Conau.ctoi
\y
ij
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, U
na.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
Silicon PNP Power Transistor
2SA1909
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
V(
B
R)CEo= -140V(Min)
• Good Linearity of HFE
• Complement to Type 2SC5101
PIN 1.BASE
2.COLLECTOR
3.B/IITTER
1
2
3
TO-3PML package
APPLICATIONS
• Designed for audio and general purpose applications
<*>
ABSOLUTE MAXIMUM RATINGS(T
a
=25"C)
SYMBOL
PARAMETER
VALUE
UNIT
;
f
f
VCBO
Collector-Base Voltage
-140
V
VCEO
Collector-Emitter Voltage
-140
V
mm
VEBO
Emitter-Base Voltage
-6
V
DIM
MM
A
19.90
Ic
Collector Current-Continuous
-10
A
IB
Base Current-Continuous
Collector Power Dissipation
@ T
C
=25°C
Junction Temperature
-4
A
B
C
D
F
G
H
J
K
L
PC
80
W
Tj
150
°C
N
Q
R
S
0
Y
Z
T
s
tg
Storage Temperature Range
-55-150
°c
15.90
5.50
0.90
3.30
2.90
5.90
0.59S
22.30
1.90
10.80
4.90
3.75
3.20
9.90
4.70
1.90
MAX
20.10
16.10
5.70
1.10
3.50
3.10
6.10
0.605
22.50
2.10
11.00
5.10
3.95
3.40
10.10
4.90
2.10
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25'C
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2SA1909
MIN
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
l
c
= -50mA; I
B
= 0
-140
V
VcE(sat)
Collector-Emitter Saturation Voltage
l
c
= -5A; I
B
= -0.5A
-0.5
V
ICBO
Collector Cutoff Current
V
CB
= -UOV; I
E
= 0
-10
uA
IEBO
Emitter Cutoff Current
V
EB
= -6V; l
c
= 0
-10
uA
h
FE
DC Current Gain
lc= -3A; Vce= -4V
50
COB
Collector Output Capacitance
I
E
=0; V
CB
=-10V;f=1MHz
400
PF
ft
Current-Gain — Bandwidth Product
I
E
=0.5A;V
CE
=-12V
20
MHz
Switching times
ton
Turn-on Time
|
C
=_5A, R
L
=12Q,
|
B1
= -i
B2
= -Q.5A, V
cc
= -60V
0.17
vs
tstg
Storage Time
1.86
us
v
s
tf
Fall Time
0.27
h
FE
classifications
o
50-100
P
70-140
Y
90-180
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