C7
J.
E.IIS.U
,
Li
ne.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon PNP Power Transistor
2SA1930
DESCRIPTION
• High Transition Frenquency : fr=200MHz(Typ.)
• Complementary to 2SC5171
1
APPLICATIONS
• Power amplifier applications
• Driver stage amplifier applications
-
B
-
Q
PIN 1.BASE
2.COLLECTOR
3. EMITTER
1 2 3
- C-
TO-220F package
m
\f
ABSOLUTE MAXIMUM RATINGS(T
a
=25'C)
SYMBOL
VCBO
VCEO
VEBO
Ic
IB
PC
-s-
U I
V
i F,
fc
'-*
A
; i
H
\
i ,_L -
- R-
"-V;,U
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Base Current-Continuous
Collector Power Dissipation
@ T
C
=25'C
Junction Temperature
Storage Temperature Range
VALUE
-180
-180
-5
-2
-1
20
150
-55-150
UNIT
V
V
V
A
A
W
°C
'C
.-D
- N-
J --
mm
WIN
DIM
A
14.95
B
10.00
C
4.40
D
0.75
MAX
15.05
10.10
4.60
0.80
3.30
3.90
0.70
13.6
1.30
5.20
2.90
2.40
2.85
6.60
F
H
J
K
L
N
q
R
Tj
s
u
3.10
3.70
0.50
13.4
1.10
5.00
2.70
2.20
2.65
6.40
Tstg
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable nt the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
Tc~25'C unless otherwise specified
SYMBOL
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
Collector Output Capacitance
Current-Gain— Bandwidth Product
CONDITIONS
lc=-10mA;l
B
=0
I
C
=-1.0A;I
B
=-0.1A
lc=-1A;V
CE
=-5V
At rated Voltage
At rated Voltage
lc=-0.1A; VcE=-5V
lc=-1A;V
CE
=-5V
lE=0;V
CB
=-10V,f=1MHz
lc=-0.3A; V
CE
=-5V
100
40
16
MIN
2SA1930
TYP.
MAX
UNIT
V
VcEO(SUS)
-180
-1.0
-1.5
-5
-5
320
VoE(sat)
V
V
uA
wA
VBE(OH)
ICBO
IEBO
hpE-1
hpE-2
Cob
fr
PF
MHz
200