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2SA2060TE12LF

Description
High-Speed Switching Applications DC-DC Converter Applications Strobe plications
File Size153KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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2SA2060TE12LF Overview

High-Speed Switching Applications DC-DC Converter Applications Strobe plications

2SA2060
TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA2060
High-Speed Switching Applications
DC-DC Converter Applications
Strobe Applications
High DC current gain: h
FE
= 200 to 500 (I
C
=
−0.3
A)
Low collector-emitter saturation voltage: V
CE (sat)
=
−0.2
V (max)
High-speed switching: t
f
= 90 ns (typ.)
Unit: mm
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature range
t = 10 s
DC
DC
Pulse
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
(Note 1)
T
j
T
stg
Rating
−50
−50
−7
−2.0
−3.5
−200
2.5
1.0
150
−55
to 150
Unit
V
V
V
A
mA
W
°C
°C
2
JEDEC
JEITA
TOSHIBA
SC-62
2-5K1A
Weight: 0.05 g (typ.)
Note 1: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm )
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
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