JMnic
Product Specification
Silicon PNP Power Transistors
2SA483
DESCRIPTION
・With
TO-66 package
・Complement
to type 2SC783
・High
voltage: V
CEO
=-150V(min)
APPLICATIONS
・Power
amplifier applications
・Vertical
output applications
PINNING(see Fig.2)
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-66) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
E
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Emitter current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open emitter
Open base
Open collector
CONDITIONS
VALUE
-150
-150
-5
-1.5
1.5
20
150
-65~150
UNIT
V
V
V
A
A
W
℃
℃
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
2SA483
MAX
UNIT
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=-10mA ;I
B
=0
-150
V
V
(BR)CBO
Collector-base breakdown voltage
I
C
=-0.5mA ;I
E
=0
-150
V
V
CEsat
Collector-emitter saturation voltage
I
C
=-0.5A; I
B
=-50mA
-1.8
V
V
BE
Base-emitter on voltage
I
C
=-0.5A ; V
CE
=-10V
-1.8
V
I
CBO
Collector cut-off current
V
CB
=-150V; I
E
=0
-0.1
mA
I
EBO
Emitter cut-off current
V
EB
=-5V; I
C
=0
-0.1
mA
h
FE
DC current gain
I
C
=-0.1A ; V
CE
=-10V
30
240
C
OB
Output capacitance
I
E
=0 ; V
CB
=-10V;f=1.0MHz
50
pF
f
T
Transition frequency
I
C
=-0.1A ; V
CE
=-10V
10
MHz
h
FE
Classifications
R
30-80
O
70-140
Y
120-240
2
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