JMnic
Product Specification
Silicon PNP Power Transistors
2SA658
DESCRIPTION
・With
TO-3 package
・Wide
area of safe operation
・Complement
to type 2SC521
APPLICATIONS
・For
audio frequency and power amplifier
applications
PINNING(see Fig.2)
PIN
1
2
3
Base
Emitter
Fig.1 simplified outline (TO-3) and symbol
Collector
DESCRIPTION
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open emitter
Open base
Open collector
CONDITIONS
VALUE
-70
-70
-5
-7
50
150
-55~150
UNIT
V
V
V
A
W
℃
℃
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
2SA658
MAX
UNIT
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=-25mA ;I
B
=0
-70
V
V
(BR)CBO
Collector-base breakdown voltage
I
C
=-1mA ;I
E
=0
-70
V
V
(BR)EBO
Emitter-base breakdown voltage
I
E
=-1mA ;I
C
=0
-5
V
V
CEsat
Collector-emitter saturation voltage
I
C
=-5A; I
B
=-1A
-2.0
V
V
BEsat
Base-emitter saturation voltage
I
C
=-5A; I
B
=-1A
-2.5
V
I
CBO
Collector cut-off current
V
CB
=-70V; I
E
=0
-0.1
mA
I
EBO
Emitter cut-off current
V
EB
=-5V; I
C
=0
-0.1
mA
h
FE
DC current gain
I
C
=-1A ; V
CE
=-5V
30
300
C
OB
Collector output capacitance
I
E
=0; V
CB
=-10V;f=1MHz
150
pF
f
T
Transition frequency
I
C
=-1A ; V
CE
=-10V
5
MHz
2
京公网安备 11010802033920号
EEWORLD
