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2SA673AKBTZ-E

Description
Silicon PNP Epitaxial
CategoryDiscrete semiconductor    The transistor   
File Size94KB,6 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

2SA673AKBTZ-E Overview

Silicon PNP Epitaxial

2SA673AKBTZ-E Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)60
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee2
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)0.4 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN COPPER
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)120 MHz
Base Number Matches1
Preliminary
Datasheet
2SA673A(K)
Silicon PNP Epitaxial
Application
Low frequency amplifier
Medium speed switching
R07DS0430EJ0400
(Previous: REJ03G0627-0300)
Rev.4.00
Jun 07, 2011
Outline
RENESAS Package code: PRSS0003DA-A
(Package name: TO-92 (1))
1. Emitter
2. Collector
3. Base
3
2
1
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Ratings
–50
–50
–4
–0.5
0.4
150
–55 to +150
Unit
V
V
V
A
W
°C
°C
R07DS0430EJ0400 Rev.4.00
Jun 07, 2011
Page 1 of 5

2SA673AKBTZ-E Related Products

2SA673AKBTZ-E 2SA673AK 2SA673AKCTZ-E 2SA673AKDTZ-E
Description Silicon PNP Epitaxial Silicon PNP Epitaxial Silicon PNP Epitaxial Silicon PNP Epitaxial
package instruction CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-W3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3
Reach Compliance Code compli unknown compli compli
JEDEC-95 code TO-92 TO-92 TO-92 TO-92
JESD-30 code O-PBCY-T3 O-PBCY-W3 O-PBCY-T3 O-PBCY-T3
Number of terminals 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO
Terminal form THROUGH-HOLE WIRE THROUGH-HOLE THROUGH-HOLE
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM
Base Number Matches 1 1 1 1
Is it lead-free? Lead free - Lead free Lead free
Is it Rohs certified? conform to - conform to conform to
Parts packaging code TO-92 - TO-92(1) TO-92
Contacts 3 - 3 3
ECCN code EAR99 - EAR99 EAR99
Maximum collector current (IC) 0.5 A - 0.5 A 0.5 A
Collector-emitter maximum voltage 50 V - 50 V 50 V
Configuration SINGLE - SINGLE SINGLE
Minimum DC current gain (hFE) 60 - 100 160
JESD-609 code e2 - e2 e2
Humidity sensitivity level 1 - 1 1
Number of components 1 - 1 1
Peak Reflow Temperature (Celsius) NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED
Polarity/channel type PNP - PNP PNP
Maximum power dissipation(Abs) 0.4 W - 0.4 W 0.4 W
Terminal surface TIN COPPER - TIN COPPER TIN COPPER
Maximum time at peak reflow temperature NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING - SWITCHING SWITCHING
Transistor component materials SILICON - SILICON SILICON
Nominal transition frequency (fT) 120 MHz - 120 MHz 120 MHz

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