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2SA812-M7

Description
PNP Silicon Epitaxial Transistors
File Size198KB,2 Pages
ManufacturerMCC
Websitehttp://www.mccsemi.com
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2SA812-M7 Overview

PNP Silicon Epitaxial Transistors

MCC
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
2SA812-M4
2SA812-M5
2SA812-M6
2SA812-M7
PNP
Silicon
Epitaxial Transistors
SOT-23
Features
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
High DC Current Gain:90 h
FE
600.(V
CE
=-6.0V, I
C
=-1mA)
High voltage: V
CEO
=-50V
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
C
T
J
T
STG
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Collector power dissipation
Junction Temperature
Storage Temperature
Rating
-50
-60
-5.0
-100
200
-55 to +150
-55 to +150
Unit
V
V
V
mA
mW
Maximum Ratings
A
D
C
C
B
B
F
E
E
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Symbol
Parameter
Collector Cutoff Current
(V
CB
=-60Vdc,I
E
=0)
Emitter Cutoff Current
(V
EB
=-5.0Vdc, I
C
=0)
DC Current Gain*
(I
C
=-1.0mAdc, V
CE
=-6.0Vdc)
Collector Saturation Voltage*
(I
C
=-100mAdc, I
B
=-10mAdc)
Base Emitter Voltage*
(V
CE
=-6.0Vdc, I
C
=-1.0mAdc)
Gain Bandwidth product
(V
CE
=-6.0Vdc, I
E
=-10mAdc)
Min
---
---
Typ
---
---
Max
-0.1
-0.1
Units
uAdc
uAdc
DIM
A
B
C
D
E
F
G
H
J
K
INCHES
MIN
.110
.083
.047
.035
.070
.018
.0005
.035
.003
.015
G
H
J
OFF CHARACTERISTICS
I
CBO
I
EBO
K
DIMENSIONS
MM
MAX
.120
.098
.055
.041
.081
.024
.0039
.044
.007
.020
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
ON CHARACTERISTICS
h
F
V
CE(sat)
V
BE
f
T
90
---
---
180
---
---
---
---
600
-0.3
-0.68
---
---
Vdc
Vdc
MHz
CLASSIFICATION OF h
FE
Marking
Range
M4
90-180
M5
135-270
M6
200-400
M7
300-600
.035
.900
Suggested Solder
Pad Layout
.031
.800
.079
2.000
inches
mm
.037
.950
.037
.950
Revision:
A
www.mccsemi.com
1
of
2
2011/01/01

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