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2SC4738

Description
0.15A , 60V NPN Plastic Encapsulated Transistor
CategoryDiscrete semiconductor    The transistor   
File Size279KB,2 Pages
ManufacturerSECOS
Websitehttp://www.secosgmbh.com/
Download Datasheet Parametric View All

2SC4738 Overview

0.15A , 60V NPN Plastic Encapsulated Transistor

2SC4738 Parametric

Parameter NameAttribute value
Reach Compliance Codecompli
Base Number Matches1
2SC4738
Elektronische Bauelemente
0.15A , 60V
NPN Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
High Voltage and High Current
High DC Current Gain
Complementary to 2SA1832
A
M
3
SOT-523
3
Top View
C B
1
2
2
CLASSIFICATION OF h
FE
Product-Rank
Range
Marking
2SC4738-Y
120~240
LY
2SC4738-GR 2SC4738-BL
200~400
LG
350~700
LL
F
K
1
L
E
D
G
REF.
Millimeter
Min.
Max.
1.5
1.7
1.45
1.75
0.75
0.85
0.7
0.9
0.9
1.1
0.15
0.25
H
J
Millimeter
Min.
Max.
-
0.1
0.55 REF.
0.1
0.2
-
0.5 TYP.
0.25
0.325
REF.
G
H
J
K
L
M
PACKAGE INFORMATION
Package
SOT-523
MPQ
3K
Leader Size
7 inch
A
B
C
D
E
F
Collector
3
1
Base
2
Emitter
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C unless otherwise noted)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
J
, T
STG
Ratings
60
50
5
150
100
1250
150, -55~150
Unit
V
V
V
mA
mW
°C
/ W
°C
ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut - off Current
Emitter Cut - off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
Min.
60
50
5
-
-
120
-
80
-
Typ.
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
100
700
0.25
-
3.5
Unit
V
V
V
nA
nA
V
MHz
pF
Test Conditions
I
C
=100µA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=100µA, I
C
=0
V
CB
=60V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=6V, I
C
=2mA
I
C
=100mA, I
B
=10mA
V
CE
=10V, I
C
=1mA
V
CB
=10V, I
E
=0, f=1MHz
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
23-Feb-2012 Rev. A
Page 1 of 2
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