2SC5130
Silicon NPN Triple Diffused Planar Transistor
(High Voltage and High Speed Switchihg Transistor)
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
Ratings
600
400
10
5(
Pulse
10)
2
30(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Application :
Switching Regulator and General Purpose
External Dimensions
FM20(TO220F)
4.0
±0.2
10.1
±0.2
4.2
±0.2
2.8 c0.5
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=500V
V
EB
=10V
I
C
=25mA
V
CE
=4V, I
C
=1.5A
I
C
=1.5A, I
B
=0.3A
I
C
=1.5A, I
B
=0.3A
V
CE
=12V, I
E
=–0.3A
V
CB
=10V, f=1MHz
100
max
10
max
400
min
10 to 30
0.5
max
1.3
max
20
typ
30
typ
(Ta=25°C)
Ratings
Unit
µ
A
16.9
±0.3
V
V
V
8.4
±0.2
µ
A
13.0min
MHz
pF
1.35
±0.15
1.35
±0.15
0.85
+0.2
-0.1
0.45
+0.2
-0.1
2.54
2.2
±0.2
2.4
±0.2
2.54
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
200
R
L
(Ω)
133
I
C
(A)
1.5
V
BB1
(V)
10
V
BB2
(V)
–5
I
B1
(A)
0.15
I
B2
(A)
–0.3
t
on
(
µ
s)
1
max
t
stg
(
µ
s)
2
max
t
f
(
µ
s)
0.3
max
3.9
B C E
±0.2
I
C
– V
C E
Characteristics
(Typical)
8
A
00m
V
CE
(sat)–I
C
Characteristics
(Typical)
C ol l e c t o r - E m i tt e r S at u r a t i o n Vol t ag e V
C E ( s at)
(V )
1.5
I
C /
I
B
= 5 Co ns t .
I
C
– V
B E
Temperature Characteristics
(Typical)
( V
C E
=4 V )
5
5
500mA
Co l l e c t o r Cu r r en t I
C
( A)
30 0m A
1.0
3
C o l l e c t or C u r r e n t I
C
( A)
4
4
3
15 0m A
2
p)
0.8
±0.2
a
b
ø3.3
±0.2
Weight : Approx 2.0g
a. Part No.
b. Lot No.
mp)
e Te
(Cas
Cas
e
0
0
1
2
3
4
0
0.01
–55˚C (Case Temp)
0.05 0. 1
0.5
1
5
0
0
0.2
0.4
125
0 .6
25˚C
1
0.8
–55˚C
1
˚C (
I
B
=50mA
25˚C (Case Temp)
(Case
0.5
125˚C (Case Temp)
2
Temp
Tem
)
1.0
1 .2
1 .4
C ol l ec t or - Emi t t e r V ol ta ge V
C E
( V)
Co l le c to r Cu r r e n t I
C
( A)
B a s e - Em i t t o r Vo l t a g e V
BE
( V )
(V
C E
= 4 V )
50
D C C u r r e nt Ga i n h
FE
2
S w i t c h i n g T i m e
t
on•
t
stg•
t
f
(
µ
s )
12 5˚C
2 5˚C
t
s tg
Transient Thermal Resistance
θ
j-a
( ˚ C/ W )
h
F E
– I
C
Characteristics
(Typical)
t
o n
•t
s t g
• t
f
– I
C
Characteristics
(Typical)
θ
j - a
– t Characteristics
5
1
–5 5˚C
0 .5
t
on
t
f
0 .1
0.1
V
CC
2 0 0 V
I
C
: I
B 1
: – I
B2
= 10 : 1: 2
0. 5
1
3
1
10
5
0.01
0 . 05
0.1
0. 5
1
5
0 .5
0 .4
1
10
T i m e t( m s )
100
1000
Co l le ct o r C u rre nt I
C
(A)
C o ll e ct o r Cu r r e n t I
C
( A)
Safe Operating Area
(Single Pulse)
20
10
10
Reverse Bias Safe Operating Area
20
30
Pc – Ta Derating
5
C oll ec t o r Cu r r e n t I
C
( A )
0
µ
Col lec t o r Cu r r e n t I
C
( A )
s
5
M ax im um P o we r D i s s i p a t i o n P
C
( W )
50
µ
s
10
W
ith
20
In
fin
ite
he
at
si
1
0.5
1
0 .5
Without Heatsink
Natural Cooling
L=3mH
–I
B2
=0.5A
Duty:less than 1%
nk
10
Without Heatsink
Natural Cooling
W i th o u t H e a t s i n k
2
0.1
5
10
50
10 0
500
Co ll e ct o r -Em i t te r V ol tag e V
C E
( V)
0 .1
5
10
50
1 00
50 0
0
0
25
50
75
100
1 25
1 50
C o ll e ct o r - Em i t te r Vo lt a ge V
C E
( V)
Am b i e n t T e m pe r a t u r e T a( ˚ C)
130
Embedded System
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