Ordering number : ENA1087
2SC5347A
SANYO Semiconductors
DATA SHEET
NPN Epitaxial Planar Silicon Transistor
2SC5347A
Features
•
High-Frequency Semi-Power Output Stage,
Low-Noise Medium Output Amplifier Applications
High-frequency medium output amplification
(VCE=5V, IC=50mA)
: fT=4.7GHz typ (f=1GHz).
:⏐S21e⏐
2
=8dB typ (f=1GHz).
: NF=1.8dB typ (f=1GHz).
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Conditions
Ratings
20
12
2
150
Unit
V
V
V
mA
W
°C
°C
When mounted on ceramic substrate (900mm
✕0.8mm)
2
1.3
150
--55 to +150
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
www.semiconductor-sanyo.com/network
D0308AB MS IM TC-00001778 No. A1087-1/6
2SC5347A
160
140
IC -- VCE
μ
A
1000
A
900
μ
A
800
μ
700
μ
A
5
hFE -- IC
VCE=5V
Collector Current, IC -- mA
100
80
60
40
20
0
0
DC Current Gain, hFE
120
3
600
μ
A
500
μ
A
2
400
μ
A
300
μ
A
100
200
μA
100
μA
IB=0
μA
2
4
6
8
10
IT14230
5
7
5
1.0
2
3
5
7
10
2
3
5
7 100
2
3
Collector-to-Emitter Voltage, VCE -- V
10
7
Collector Current, IC -- mA
IT14231
fT -- IC
Cob -- VCB
f=1MHz
VCE=5V
3
Gain-Bandwidth Product, fT -- GHz
Output Capacitance, Cob -- pF
7 1.0
2
3
5
7 10
2
3
5
7 100
2
3
5
3
2
2
1.0
7
5
3
2
1.0
7
5
3
2
0.1
0.1
7 0.1
2
3
5
7 1.0
2
3
5
7 10
2
3
Collector Current, IC -- mA
5
ITR08158
12
Cre -- VCB
Collector-to-Base Voltage, VCB -- V
ITR08159
NF -- IC
f=1MHz
Reverse Transfer Capacitance, Cre -- pF
3
VCE=5V
f=1GHz
10
Noise Figure, NF -- dB
2
8
1.0
7
5
3
2
6
4
2
0.1
7 0.1
2
3
5
7
1.0
2
3
5
7
10
2
3
0
7 1.0
2
3
5
7 10
2
3
5
7 100
2
3
12
Collector-to-Base Voltage, VCB -- V
⏐
S21e
⏐
2
-- I
ITR08160
1.4
1.3
Collector Current, IC -- mA
ITR08162
C
PC -- Ta
When mounted on ceramic substrate
(900mm
2
✕0.8mm)
Forward Transfer Gain,
⏐
S21e
⏐
2
-- dB
VCE=5V
f=1GHz
Collector Dissipation, PC -- W
2
3
5
7
2
3
5
7 100
2
3
10
1.2
1.0
8
0.8
6
0.6
4
0.4
2
0.2
0
0
0
1.0
10
20
40
60
80
100
120
Collector Current, IC -- mA
ITR08161
Ambient Temperature, Ta --
°C
140
160
ITR08163
No. A1087-3/6
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