JMnic
Product Specification
Silicon NPN Power Transistors
2SC5417
DESCRIPTION
・With
TO-220F package
・High
breakdown voltage
・High
reliability
APPLICATIONS
・For
inverter lighting applications
PINNING
PIN
1
2
3
Base
Collector
Fig.1 simplified outline (TO-220F) and symbol
Emitter
DESCRIPTION
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
T
a
=25℃
P
C
Collector power dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
25
150
-55~150
℃
℃
Open emitter
Open base
Open collector
CONDITIONS
VALUE
1200
600
9
3
6
2
W
UNIT
V
V
V
A
A
JMnic
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2SC5417
TYP.
MAX
UNIT
V
CEO(SUS)
Collector-emitter sustaining voltage
I
C
=0.1A; I
B
=0
600
V
V
CEsat
Collector-emitter saturation voltage
I
C
=1.5A; I
B
=0.3 A
1.0
V
V
BEsat
Base-emitter saturation voltage
I
C
=1.5A; I
B
=0.3 A
1.5
V
μA
I
CBO
Collector cut-off current
V
CB
=600V; I
E
=0
10
I
CES
Collector cut-off current
V
CE
=1200V; R
BE
=0
1.0
mA
I
EBO
Emitter cut-off current
V
EB
=9V; I
C
=0
1.0
mA
h
FE-1
DC current gain
I
C
=0.1A ; V
CE
=5V
30
50
h
FE-2
DC current gain
I
C
=1.0A ; V
CE
=5V
10
Switching times
μs
t
s
Storage time
I
C
=1.5A;I
B1
=0.3A ;I
B2
=-0.6A
2.5
t
f
Fall time
0.15
μs
2
JMnic
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC5417
Fig.2 outline dimensions
3
JMnic
Product Specification
Silicon NPN Power Transistors
2SC5417
4
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