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2SC5482_12

Description
For Low Frequency Power Amplify Application Silicon NPN Epitaxial Type Micro
File Size249KB,4 Pages
ManufacturerIsahaya
Websitehttp://www.idc-com.co.jp/
Download Datasheet View All

2SC5482_12 Overview

For Low Frequency Power Amplify Application Silicon NPN Epitaxial Type Micro

〈transistor〉
2SC5482
For Low Frequency Power Amplify Application
Silicon NPN Epitaxial Type Micro(Frame type)
DESCRIPTION
2SC5482 is a silicon NPN epitaxial designed for
relay drive or power supply application.
3.0
OUTLINE DRAWING
4.0
UNIT:mm
13.0MIN
1.0
1.0
0.1
0.45
14.0
2.5
2.5
2.5
TERMINAL CONNECTOR
①:EMITTER
EIAJ: -
②:COLLECTOR
JEDEC: -
③:BASE
MAXIMUM RATINGS(Ta=25℃)
Symbol
V
CBO
V
EBO
V
CEO
I
CM
I
C
P
C
Tj
Tstg
Parameter
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Peak collector current
Collector current
Collector dissipation
Junction temperature
Storage temperature
Ratings
60
6
60
2
1
600
+150
-55½+150
Unit
V
V
V
A
A
mW
MARKING
482
□□C
hFE Item
ELECTRICAL CHARACTERISTICS(Ta=25℃)
Limits
Parameter
V(
BR
)
CBO
V(
BR
)
EBO
V(
BR
)
CEO
I
CBO
I
EBO
hFE
VCE(sat)
fT
Cob
Item
hFE
C
55½110
D
90½180
E
150½300
Symbol
C to B break down voltage
E to B break down voltage
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain ※
C to E Saturation voltage
Gain bandwidth product
Collector output capacitance
Test conditions
I
C
= 10μA , I
E
= 0mA
I
E
=10μA , I
C
= 0mA
I
C
=2mA , R
BE
= ∞
V
V
V
CB
EB
0.4
7.5MAX
Min
60
6
60
-
-
55
-
-
-
Typ
-
-
-
-
-
-
0.11
120
14
Max
-
-
-
0.2
0.2
300
0.3
-
-
Unit
V
V
V
μA
μA
-
V
MHz
pF
= 50V , I
E
= 0mA
=4V , I
C
= 100mA
= 4V , I
C
= 0mA
CE
I
C
=500mA , I
B
= 25mA
V
V
CE
= 2V , I
E
= -10mA
= 10V , I
E
= 0mA,f=1MHz
CB
ISAHAYA ELECTRONICS CORPORATION
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